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    BU807 Price and Stock

    Taiwan Semiconductor GBU807H

    BRIDGE RECT 1PHASE 1KV 8A GBU
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    DigiKey GBU807H Tube 1,000 1
    • 1 $1.31
    • 10 $1.31
    • 100 $1.31
    • 1000 $0.535
    • 10000 $0.535
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    Avnet Americas GBU807H Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $0.5243
    • 10000 $0.49606
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    Mouser Electronics GBU807H
    • 1 $1.31
    • 10 $0.792
    • 100 $0.624
    • 1000 $0.535
    • 10000 $0.535
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    EBV Elektronik GBU807H 8 Weeks 1,000
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    Taiwan Semiconductor GBU807

    BRIDGE RECT 1PHASE 1KV 8A GBU
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    DigiKey GBU807 Tube 520 1
    • 1 $1.46
    • 10 $1.46
    • 100 $1.46
    • 1000 $0.51476
    • 10000 $0.4595
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    Avnet Americas GBU807 Tube 6 Weeks 1,000
    • 1 -
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    • 1000 $0.50447
    • 10000 $0.49417
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    Mouser Electronics GBU807 663
    • 1 $1.22
    • 10 $1
    • 100 $0.779
    • 1000 $0.538
    • 10000 $0.46
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    EBV Elektronik GBU807 8 Weeks 1,000
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    Taiwan Semiconductor KBU807G

    BRIDGE RECT 1PHASE 1KV 8A KBU
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    DigiKey KBU807G Tray 428 1
    • 1 $2.05
    • 10 $1.396
    • 100 $1.02388
    • 1000 $0.75665
    • 10000 $0.72025
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    Avnet Americas KBU807G Tray 500
    • 1 -
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    • 100 -
    • 1000 $0.68109
    • 10000 $0.66783
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    Mouser Electronics KBU807G
    • 1 $2.08
    • 10 $1.16
    • 100 $0.991
    • 1000 $0.814
    • 10000 $0.72
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    TME KBU807G 1
    • 1 $1.72
    • 10 $1.54
    • 100 $1.36
    • 1000 $1.14
    • 10000 $1.02
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    EBV Elektronik KBU807G 13 Weeks 500
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    Central Semiconductor Corp BU807

    TRANS NPN DARL 150V 8A TO220-3
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    DigiKey BU807 Tube
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    STMicroelectronics BU807

    TRANS NPN DARL 150V 8A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BU807 Tube 1,000
    • 1 -
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    • 1000 $0.87157
    • 10000 $0.87157
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    Find more BU807 price and stock on Findchips.com

    BU807 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BU807 Central Semiconductor Power Transistors TO-220 Case Original PDF
    BU807 Fairchild Semiconductor NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Original PDF
    BU807 Fairchild Semiconductor NPN Epitaxial Silicon Darlington Transistor Original PDF
    BU807 STMicroelectronics TRANS DARLINGTON NPN 150V 8A 3TO-220 Original PDF
    BU807 STMicroelectronics MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTORS Original PDF
    BU807 Various Russian Datasheets Transistor Original PDF
    BU807 Boca Semiconductor FAST SWITCHING DARLINGTON TRANSISTOR Scan PDF
    BU807 Central Semiconductor Power Darlington Transistors (Epoxy) Scan PDF
    BU807 Central Semiconductor Power Darlington Transistors (Epoxy) Scan PDF
    BU807 Central Semiconductor Power Transistors Scan PDF
    BU807 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    BU807 Fairchild Semiconductor NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Scan PDF
    BU807 Mospec POWER TRANSISTORS(8.0A,150-200V,60W) Scan PDF
    BU807 Mospec Fast Switching Darlington Transistor Scan PDF
    BU807 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BU807 Motorola European Master Selection Guide 1986 Scan PDF
    BU807 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BU807 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BU807 Unknown Cross Reference Datasheet Scan PDF
    BU807 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BU807 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU806

    Abstract: BU807 bu806 equivalent using of damper in Horizontal Output Transistor BU806 s&T
    Text: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR


    Original     		PDF BU806 BU807 O-220 O-220 BU806 BU807 bu806 equivalent using of damper in Horizontal Output Transistor BU806 s&T

    BU806

    Abstract: BU807
    Text: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR


    Original     		PDF BU806 BU807 O-220 O-220 BU806 BU807

    BU806FI

    Abstract: BU807 BU806FI EQUIVALENT DATASHEET BU806 BU806F transistor bu806
    Text: BU806/BU806FI BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ HORIZONTAL DEFLECTION FOR


    Original     		PDF BU806/BU806FI BU807 BU806, BU807 BU806FI O-220 ISOWATT220 O-220 ISOWATT220 BU806FI EQUIVALENT DATASHEET BU806 BU806F transistor bu806

    BU806

    Abstract: BU807
    Text: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s t c u d o ) r s ( P t c e t u e d


    Original     		PDF BU806 BU807 O-220 O-220 BU806 BU807

    BU806

    Abstract: BU807 0147M
    Text: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR


    Original     		PDF BU806 BU807 O-220 O-220 P011CI BU806 BU807 0147M

    BU806

    Abstract: BU807 400V100
    Text: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR


    Original     		PDF BU806 BU807 O-220 O-220 BU806 BU807 400V100

    BU807

    Abstract: BU806
    Text: BU806 BU807  MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ HORIZONTAL DEFLECTION FOR


    Original     		PDF BU806 BU807 O-220 O-220 BU807 BU806

    NPN Transistor 50A 400V

    Abstract: 400v 50A Transistor BU807 400V 100MA NPN
    Text: BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER


    Original     		PDF BU806 BU807 O-220 BU806) BU807) NPN Transistor 50A 400V 400v 50A Transistor 400V 100MA NPN

    NPN Transistor 50A 400V

    Abstract: 400v 50A Transistor bu807 BU806 400V 100MA NPN
    Text: BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER


    Original     		PDF BU806 BU807 O-220 BU806) BU807) NPN Transistor 50A 400V 400v 50A Transistor 400V 100MA NPN

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


    Original     		PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    mj15052

    Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
    Text: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of


    Original     		PDF AN930 AN930/D hull111111 mj15052 mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032

    damper diode darlington npn

    Abstract: bu806 BU807 ea8 diode ra 220 diode
    Text: BU806/BU806FI BU807 SGS-THOMSON l^OigiOllLiÛïïiOiOOi MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPES NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EM ITTER DIODE APPLICATION


    OCR Scan     		PDF BU806/BU806FI BU807 BU806, BU807 BU806FI O-220 ISOWATT220 T0-220 ISOWATT220 damper diode darlington npn bu806 ea8 diode ra 220 diode

    using of damper in Horizontal Output Transistor

    Abstract: BU806 bu806f1 Transformer eht horizontal deflection tda1180 TDA1180 equivalent bu806 eht transformer
    Text: i T T SGS-THOMSON 7# « Ic m iC T M * ! BU806/F1 BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS ESCR1PTION he BU806/807 and BU806F1/807FI are silicon pitaxial planar NPN power transistors in Darigton configuration with integrated base-emitter leed-up diode, mounted respectively in T0-220


    OCR Scan     		PDF BU806 BU807/FI BU806/807 BU806F1/807FI T0-220 ISOWATT220 BU806/FI using of damper in Horizontal Output Transistor bu806f1 Transformer eht horizontal deflection tda1180 TDA1180 equivalent bu806 eht transformer

    BU806

    Abstract: BU807 CO530
    Text: ÜàMOSPEC FAST SWITCHING DARLINGTON TRANSISTOR NPN They are high voltage,high current devices for fast switching applications. BU806 BU807 FEATURES: * Collector-Emitter Sustaining Voltage 1 5 0 V M i n -BU807 = 200 V (Min.) -BU806 * Low Collector-Emitter Saturation Voltage V C E ( S a t ) = 1-5V (Max.) @ lc = 5.0 A, lB = 50 mA


    OCR Scan     		PDF BU807 BU806 BU806 BU807 CO530

    BDX53D

    Abstract: D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8
    Text: Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type NPN 2N6044 TIP101 BDX53B TIP131 BD899 BD899A BDX53C TIP132 BD901 2N6045 TIP102 MJE15028 BDX53D MJE15030 BU807 BU806 MJE13006 Uceo PNP 2N6041 TIP106 BDX54B TIP136 B0900 BD900A


    OCR Scan     		PDF 2N6044 2N6041 TIP101 TIP106 1k/20k BDX53B BDX54B TIP131 TIP136 1k/15k BDX53D D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8

    OC314

    Abstract: No abstract text available
    Text: rz z Ä7 I SGS-TUOMSON BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS D E S C R IP T IO N The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter speed-up diode, mounted respectively in TO-220


    OCR Scan     		PDF BU806/FI BU807/FI BU806/807 BU806FI/807FI O-220 ISOWATT220 BU807/FI ISOWATT22Q OC314

    bu806 equivalent

    Abstract: horizontal deflection tda1180 BU806 BU806FI bu807 equivalent
    Text: r z 7 SCS-THOM SON A 7 f G«ra iLiOT i[] es BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS DESCRIPTION The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter


    OCR Scan     		PDF BU806/FI BU807/FI BU806/807 BU806FI/807FI O-220 ISOWATT220 BU807/FI 500ms bu806 equivalent horizontal deflection tda1180 BU806 BU806FI bu807 equivalent

    bu806 equivalent

    Abstract: BU806FI EQUIVALENT BU806 TDA1180 eht transformer using of damper in Horizontal Output Transistor CW-70 horizontal deflection tda1180 crt flyback transformer tv u806
    Text: rrz SGS-THOMSON BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS DESCRIPTION The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter speed-up diode, mounted respectively in T0-220


    OCR Scan     		PDF BU806 BU807/FI BU806/807 BU806FI/807FI T0-220 ISOWATT220 BU806/FI BU807/FI bu806 equivalent BU806FI EQUIVALENT TDA1180 eht transformer using of damper in Horizontal Output Transistor CW-70 horizontal deflection tda1180 crt flyback transformer tv u806

    BU806

    Abstract: BU806FI BU807 Darlington transistor T7 27 BU806 SGS transistor j 127
    Text: SGS-THOMSON IM [im[i Sra iD(gS BU806/BU806FI BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . HORIZONTAL DEFLECTION FOR


    OCR Scan     		PDF BU806/BU806FI BU807 BU806, BU807 BU806FI T0-220 ISOWATT220 BU806 Darlington transistor T7 27 BU806 SGS transistor j 127

    Untitled

    Abstract: No abstract text available
    Text: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . NPN DARLINGTONS . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . HORIZONTAL DEFLECTION FOR MONOCHROME TVs


    OCR Scan     		PDF BU806 BU807 O-220

    BU806

    Abstract: CO530 BU807 "Darlington Transistor" npn darlington transistor 200 watts
    Text: FAST SWITCHING DARLINGTON TRANSISTOR NPN They are high voltage,high current devices for fast switching applications. BU806 BU807 FEATURES: * Collector-Emitter Sustaining Voltage 1 5 0 V M i n -BU807 = 200 V (Min.) -BU806 * Low Collector-Emitter Saturation Voltage V C E ( S a t ) = 1-5V (Max.) @ lc = 5.0 A, lB = 50 mA


    OCR Scan     		PDF BU807 BU806 BU806 BU807 CO530 "Darlington Transistor" npn darlington transistor 200 watts

    T1P122

    Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
    Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400


    OCR Scan     		PDF 2SC3039 MJE13005 T1P49 MJE30SST TIP31A T1P41A TIP120 CIL4006 BD211 BD243 T1P122 T1P41C t1p41 T1P31 2SD880Y 2SD88D 2N529B

    Untitled

    Abstract: No abstract text available
    Text: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50


    OCR Scan     		PDF BDW23 BDW24 BDW23A BDW24A BDW23B BDW24B BDW23C BDW24C BDX53E BDX54E