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    BUK445 60 Search Results

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    BUK445 60 Price and Stock

    Philips Semiconductors BUK445600B

    POWERMOS TRANSISTOR MOSFET N Power Field-Effect Transistor, 2.2A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    BUK445 60 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK445-60 Philips Semiconductors Powermos Transistor Original PDF
    BUK445-600A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK445-600A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK445-600A Philips Semiconductors Power MOS Transistor Scan PDF
    BUK445-600B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK445-600B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK445-600B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK445-600B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK445-600B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK445-60A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK445-60A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK445-60A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK445-60A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK445-60A Philips Semiconductors Power MOS Transistor Scan PDF
    BUK445-60B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK445-60B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK445-60B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK445-60B Philips Semiconductors POWERMOS TRANSISTOR Scan PDF
    BUK445-60B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK445-60H Philips Semiconductors Powermos Transistor Original PDF

    BUK445 60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    flyback transformer philips TV EHT AT2097

    Abstract: TDA8447 TU305B2 AT2097 TRANSISTOR D405 flyback transformer philips AT2097 BC548 TRANSISTOR SMD IC2 7812 D409 transistor UC3843 SMD
    Text: APPLICATION NOTE Circuit description of CCM420 monitor AN97032 Philips Semiconductors Circuit description of CCM420 monitor Application Note AN97032 Abstract 2 The CCM420 demo monitor is a full I C-bus controlled 17” colour monitor. It’s extensive geometry control and


    Original     		CCM420 AN97032 CCM420 P83Cx81. P83Cx80 P83Cx81 P83Cx81) flyback transformer philips TV EHT AT2097 TDA8447 TU305B2 AT2097 TRANSISTOR D405 flyback transformer philips AT2097 BC548 TRANSISTOR SMD IC2 7812 D409 transistor UC3843 SMD PDF

    BUK445-600A

    Abstract: BUK445 envelope BUK445-600B tg 25 600b TG-11
    Text: N AUER P H I L I P S / D I S C R E T E 5SE D • 1^53=131 0 0 2 0 4 1 5 Ô ■ PowerMOS transistor BUK445-600A BUK445-600B QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		G02D415 BUK445-600A BUK445-600B BUK445 -600A -600B envelope tg 25 600b TG-11 PDF

    BUK445

    Abstract: BUK445-500A BUK445-500B IE-04
    Text: N AMER PHI LI PS /DIS CR ETE 2SE D • ^53131 0020410 =1 ■ BUK445-500A BUK445-500B PowerMOS transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-500A BUK445-500B BUK445 -500A -500B BUK445-500A BUK445-500B IE-04 PDF

    BUK445-600B

    Abstract: BUK445 BUK445-600A
    Text: N AMER P H I LI PS /D ISCR ET E 5SE D • ^53=131 0020415 Ô ■ PowerMOS transistor BUK445-600A BUK445-600B r-3 ^ -0 ? GENERAL DESCRIPTION SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-600A BUK445-600B BUK445 -600A -600B BUK445-600B BUK445-600A PDF

    BUK445-400A

    Abstract: transistor 3707 BUK445 BUK445-400B
    Text: N AMER PHI LI PS /DIS CR ETE 55E D • 1^53*131 G020400 h PowerMOS transistor BUK445-400A BUK445-400B T -3 7 -0 ? N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		G020400 BUK445-400A BUK445-400B BUK445 -400A -400B BUK445-400A transistor 3707 BUK445-400B PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHI LIP S/ DIS CR ETE ^ 5 3 7 3 1 D020400 h 5SE D BUK445-400A BUK445-400B PowerMOS transistor r - 37 - O ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		D020400 BUK445-400A BUK445-400B BUK445 -400A -400B PDF

    BUK445

    Abstract: K445 BUK445-500A BUK445-500B
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 DOSOmO =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T -2 1 -0 1 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-500A BUK445-500B BUK445 -500A -500B K445 BUK445-500B PDF

    100-P

    Abstract: BUK445 BUK445-400A BUK445-400B
    Text: N AMER PHILIPS/DISCRETE 5SE ^53=531 D OOSDHOQ b BUK445-400A BUK445-400B PowerMOS transistor T - 3 7 -0 7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic lull-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUK445-400A BUK445-400B 37-0e) BUK445 -400A -400B 100-P PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHI LIP S/ DI SCR ET E 25 E D b b 5 3 T 31 0 0 2 0 4 1 0 =1 • BUK445-500A BUK445-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-500A BUK445-500B BUK445 -500A -500B bb53T31 PDF

    BUK445

    Abstract: SO-020 417K BUK445-50A BUK445-50B
    Text: N AMER P H I L I P S / D I S C R E T E SSE D • bbSBiai 00SD3aS 3 ■ PowerMOS transistor BUK445-50A BUK445-50B T -3 7 -0 ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-50A BUK445-50B T-37-0? BUK445 ID/100 SO-020 417K PDF

    K445

    Abstract: BUK445 BUK445-500A BUK445-500B
    Text: N AMER PHI LIP S/ DI SC RE TE 2SE D • ^53=131 D O S O m O =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T - 2 1 - 0 1 GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-500A BUK445-500B BUK445 -500A -500B K445 PDF

    BUK445-600B

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		hbS3T31 BUK445-600B -SOT186 BUK445-600B PDF

    BUK445-500B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		711062b BUK445-500B -SOT186 BUK445-500B PDF

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE PDF

    V10-40 diode philips

    Abstract: V10-40 diode D02G BUK445-450B C25F SL 100 power transistor
    Text: N AMER PHILIPS/DISCRETE 25E D • bbSBTBl 0G204QS S ■ PowerMOS transistor BUK445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bbS3T31 0G204QS BUK445-450B V10-40 diode philips V10-40 diode D02G BUK445-450B C25F SL 100 power transistor PDF

    30572

    Abstract: BUK445-500B TRANSISTOR na 44
    Text: b^E D N AMER PHILIPS/DISCRETE • bbSBSBl 0D3DS7G 7MÔ H A P X Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-500B -SOT186 yv-10 30572 BUK445-500B TRANSISTOR na 44 PDF

    TRANSISTOR SE 135

    Abstract: IE-02 BUK445-450B BUK445-450
    Text: N AMER P H I L I P S / D I S C R E T E 25E D • ^53^31 0G204QS S ■ PowerMOS transistor BUK445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		bbS3T31 0G204QS BUK445-450B TRANSISTOR SE 135 IE-02 BUK445-450 PDF

    sd 431 transistor

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in


    OCR Scan     		bb53T31 PINNING-SOT186 BUK445-100A/B BUK445 -100A -100B K445-100A/B IE-02 1E-03 1E-04 sd 431 transistor PDF

    BUK445

    Abstract: BUK445-60A BUK445-60B M/TRANSISTOR sf 249
    Text: N AMER PHILIPS/DISCRETE bTE D • ^53^31 QQ30SSD ^ST HIAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		QQ30SSD BUK445-60A/B PINNING-SOT186 BUK445 BUK445-60A BUK445-60B M/TRANSISTOR sf 249 PDF

    BUK445-60A

    Abstract: BUK445 BUK445-60B 9ss 48 TRANSISTOR
    Text: N AMER PHI LIPS/DISCRETE bTE D • ^ 53^31 Q Q 30SSD ^ST HIAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		BUK445-60A/B PINNING-SOT186 BUK445 BUK445-60A BUK445-60B 9ss 48 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bTE D bb53T31 DQ3DSbD fiTT * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		bb53T31 OT186 K445-200A/B BUK445 -200A bbS3T31 00305fci4 BUK445-200A/B 1E-01 PDF

    BUK445-100A

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK445-100A/B BUK445 -100A -100B BUK445-100A PDF

    vostro 1400

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK445-200A/B BUK445 -200A -200B PINNING-SOT186 vostro 1400 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 0030550 T5T H A P X N AUER PHILIPS/DISCRETE Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		bbS3T31 -SOT186 BUK445-60A/B BUK445 PDF