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Philips Semiconductors BUK45260A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BUK45260A		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Philips Semiconductors BUK452100A POWERMOS TRANSISTOR Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BUK452100A		15,950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NXP Semiconductors BUK452-100A N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Minimum DS Breakdown Voltage: 100 V; Transistor Element Material: SILICON;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	BUK452-100A		80			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BUK452 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
BUK452-100	Philips Semiconductors	Powermos Transistor	Original	PDF
BUK452-100A	Philips Semiconductors	PowerMOS transistor	Original	PDF
BUK452-100A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
BUK452-100A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BUK452-100A	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
BUK452-100A	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BUK452-100A	Philips Components	Datasheet Library 1989	Scan	PDF
BUK452-100A	Philips Semiconductors	PowerMOS transistor	Scan	PDF
BUK452-100A	Philips Semiconductors	PowerMOS transistor	Scan	PDF
BUK452-100A/B	Philips Semiconductors	PowerMOS transistor	Original	PDF
BUK452-100B	Philips Semiconductors	PowerMOS transistor	Original	PDF
BUK452-100B	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
BUK452-100B	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BUK452-100B	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

BUK452-100B	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BUK452-100B	Philips Components	Datasheet Library 1989	Scan	PDF
BUK452-100B	Philips Semiconductors	PowerMOS transistor	Scan	PDF
BUK452-100B	Philips Semiconductors	PowerMOS transistor	Scan	PDF
BUK452-50A	Philips Semiconductors	PowerMOS Transistor	Original	PDF
BUK452-50A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

BUK452 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUK442-100 Abstract: BUK472 BUK472-100A BUK472-100B Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,	Original	BUK452-100A/B OT186A BUK472-100A/B BUK472 -100A -100B BUK442-100 BUK472 BUK472-100A BUK472-100B	PDF
BUK442-60 Abstract: BUK472 BUK472-60A BUK472-60B Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	Original	BUK452-60A/B OT186A BUK472-60A/B BUK472 BUK442-60 BUK472 BUK472-60A BUK472-60B	PDF
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original		PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
BUK452-100A Abstract: BUK452-100 PHD10N10E Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies SMPS , motor	Original	OT428 PHD10N10E BUK452-100A BUK452-100 PHD10N10E	PDF
STK411-230E Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D	PDF
IRF9310 Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional	Original	device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution	PDF
BUK452-100A Abstract: BUK452-100B Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	Original	O220AB BUK452-100A/B BUK452 -100A -100B BUK452-100A BUK452-100B	PDF
BUK442 Abstract: BUK442-100 BUK442-100A BUK442-100B Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	Original	OT186 BUK442-100A/B BUK442 -100A -100B BUK442 BUK442-100 BUK442-100A BUK442-100B	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ^ SSE D 53=131 0 0 2 0 4 3 0 4 BUK452-50A BUK452-50B PowerMOS transistor T-37-IJ GENERAL DESCRIPTION SYMBOL > « O N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK452-50A BUK452-50B T-37-IJ BUK452	PDF
BUK472 Abstract: BUK472-60A BUK472-60B transistor mj 10010 Text: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK472-60A/B BUK452-60A/B -SOT186A BUK472 15urer OT186A; BUK472-60A BUK472-60B transistor mj 10010	PDF
B 647 AC transistor Abstract: uav specification transistor 2TH Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK452-60A/B BUK472-60A/B BUK472 T186A B 647 AC transistor uav specification transistor 2TH	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION BUK472'100A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched	OCR Scan	BUK452-100A/B BUK472 00A/B -100A -100B -SOT186A	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK452-60A/B BUK472-60A/B BUK472 OT186A	PDF

Untitled Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T0220AB SYMBOL Id p« T, R d S ON PARAMETER MAX. MAX. BUK452 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state	OCR Scan	BUK452-100A/B BUK452 -100A -100B T0220AB	PDF
pj 66 diode Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,	OCR Scan	BUK452-100A/B BUK472-100A/B BUK472 -100A -100B OT186A pj 66 diode	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,	OCR Scan	BUK452-100A/B BUK472-100A/B BUK472 -100A -100B PINNING-SOT186A -ID/100	PDF
BUK452-50A Abstract: BUK452-50B T0220AB Text: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	002D43G BUK452-50A BUK452-50B BUK452 ID/100 T0220AB	PDF
BUK472 Abstract: BUK472-100A BUK472-100B Text: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended foruse in Switched Mode Power Supplies SMPS ,	OCR Scan	BUK472-100A/B BUK452-100A/B -SOT186A BUK472 -100B BUK472-1OOA/B OT186A; BUK472-100A BUK472-100B	PDF
t100c Abstract: BUK452-50A BUK452-50B T0220AB Text: N AMER PHILIPS/DISCRETE 2SE D • btS3*131 002D430 4 ■ PowerMOS transistor BUK452-50A BUK452-50B T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	002DM3Ã BUK452-50A BUK452-50B BUK452 t100c BUK452-50B T0220AB	PDF
BUK452-100B Abstract: BUK452-100A T0220AB Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	7110fl2b BUK452-100A/B T0220AB BUK452-100B BUK452-100A T0220AB	PDF
BUK416-100BE Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93	OCR Scan	BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE	PDF
buk7530-55 Abstract: mosfet-n SOT166 TOPFET buk7530 Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263	OCR Scan	56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK452-60A/B BUK452 T0220AB	PDF

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BUK452 Price and Stock

Philips Semiconductors BUK45260A

Philips Semiconductors BUK452100A

NXP Semiconductors BUK452-100A

BUK452 Datasheets (38)

BUK452 Datasheets Context Search

BUK442-100

BUK442-60

mosfet cross reference

fqp60n06

BUK452-100A

STK411-230E

IRF9310

BUK452-100A

BUK442

Untitled

BUK472

B 647 AC transistor

Untitled

Untitled

Untitled

pj 66 diode

Untitled

BUK452-50A

BUK472

t100c

BUK452-100B

BUK416-100BE

buk7530-55

Untitled