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    BUK95 Search Results

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    BUK95 Price and Stock

    NXP Semiconductors BUK9535-55,127

    MOSFET N-CH 55V 34A TO220AB
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    DigiKey BUK9535-55,127 Tube 5,000
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    Rochester Electronics LLC BUK9509-40B,127

    PFET, 75A I(D), 40V, 0.01OHM, 1-
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    DigiKey BUK9509-40B,127 Tube 683
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    Nexperia BUK9509-40B,127

    MOSFET N-CH 40V 75A TO220AB
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    DigiKey BUK9509-40B,127 Tube
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    Verical BUK9509-40B,127 4,566 11
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    Arrow Electronics BUK9509-40B,127 4,566 1
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    NXP Semiconductors BUK9509-55A,127

    MOSFET N-CH 55V 75A TO220AB
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    DigiKey BUK9509-55A,127 Tube
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    Nexperia BUK9507-30B,127

    MOSFET N-CH 30V 75A TO220AB
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    DigiKey BUK9507-30B,127 Tube
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    Chip1Stop BUK9507-30B,127 Tube 72
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    BUK95 Datasheets (215)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK95 Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK95 Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK95 Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK95 Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK95 Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK95 Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK95 Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK95 Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK9504-40A NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    BUK9504-40A Philips Semiconductors Original PDF
    BUK9504-40A,127 NXP Semiconductors BUK9504-40 - TRANSISTOR 75 A, 40 V, 0.0059 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF
    BUK9504-40A,127 NXP Semiconductors TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 56 nC; RDS(on): [email protected]@[email protected] mOhm; Thermal Resistance: 0.5 K/W; VDSmax: 40 V; Package: SOT78 (TO-220AB); Container: Tube pack Original PDF
    BUK9505-30A NXP Semiconductors BUK9505-30 - TRANSISTOR 75 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF
    BUK9505-30A Philips Semiconductors TrenchMOS transistor Logic level FET Original PDF
    BUK9505-30A,127 NXP Semiconductors TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 4.6@[email protected]@4.5V mOhm; Thermal Resistance: 0.65 K/W; VDSmax: 30 V; Package: week 1, 2005 Original PDF
    BUK9505-30A,127 NXP Semiconductors BUK9505-30 - TRANSISTOR 75 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF
    BUK9506-30 Philips Semiconductors TrenchMOS Transistor Logic Level FET Original PDF
    BUK9506-40B Philips Semiconductors TrenchMOS logic level FET Original PDF
    BUK9506-40B,127 NXP Semiconductors TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 17 nC; RDS(on): [email protected]@[email protected] mOhm; Thermal Resistance: 0.74 K/W; VDSmax: 40 V; Package: SOT78 (TO-220AB); Container: Tube pack Original PDF
    BUK9506-40B,127 NXP Semiconductors BUK9506-40 - TRANSISTOR 75 A, 40 V, 0.0071 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power Original PDF
    ...

    BUK95 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    buk9520-100b

    Abstract: c774
    Text: BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK9520-100B AEC-Q101 buk9520-100b c774

    buk954r2

    Abstract: BUK95 BUK954R2-55B
    Text: BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK954R2-55B buk954r2 BUK95 BUK954R2-55B

    BUK9540-100A

    Abstract: BUK9640-100A
    Text: BUK95/9640-100A TrenchMOS logic level FET Rev. 03 — 08 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:


    Original
    PDF BUK95/9640-100A BUK9540-100A O-220AB) BUK9640-100A OT404 OT404,

    BUK9560-100A

    Abstract: BUK9660-100A BUK956
    Text: BUK9560-100A; BUK9660-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.


    Original
    PDF BUK9560-100A; BUK9660-100A BUK9560-100A O-220AB) BUK9660-100A OT404 OT404, BUK956

    BUK9520-100A

    Abstract: BUK9620-100A
    Text: BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.


    Original
    PDF BUK9520-100A; BUK9620-100A BUK9520-100A O-220AB) BUK9620-100A OT404 OT404,

    BUK9535-100A

    Abstract: BUK9635-100A
    Text: BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.


    Original
    PDF BUK9535-100A; BUK9635-100A BUK9535-100A O-220AB) BUK9635-100A OT404 OT404,

    Untitled

    Abstract: No abstract text available
    Text: BUK9523-75A; BUK9623-75A TrenchMOS logic level FET Rev. 01 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.


    Original
    PDF BUK9523-75A; BUK9623-75A BUK9523-75A O-220AB) BUK9623-75A OT404 OT404,

    D 795 A

    Abstract: No abstract text available
    Text: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low


    Original
    PDF BUK95/96/9E06-55B BUK9506-55B O-220AB) BUK9606-55B OT404 BUK9E06-55B OT226 D 795 A

    Untitled

    Abstract: No abstract text available
    Text: BUK951R9-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original
    PDF BUK951R9-40E

    Untitled

    Abstract: No abstract text available
    Text: BUK953R5-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original
    PDF BUK953R5-60E

    Untitled

    Abstract: No abstract text available
    Text: BUK954R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original
    PDF BUK954R4-80E

    BUK9506-40B

    Abstract: BUK9606-40B A7550
    Text: BUK95/9606-40B TrenchMOS logic level FET Rev. 01 — 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original
    PDF BUK95/9606-40B BUK9506-40B O-220AB) BUK9606-40B OT404 A7550

    BUK9512-55B

    Abstract: BUK9612-55B
    Text: BUK95/9612-55B TrenchMOS logic level FET Rev. 01 — 28 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original
    PDF BUK95/9612-55B BUK9512-55B O-220AB) BUK9612-55B OT404

    BUK9516-75B

    Abstract: BUK9616-75B
    Text: BUK95/9616-75B TrenchMOS logic level FET Rev. 01 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original
    PDF BUK95/9616-75B BUK9516-75B O-220AB) BUK9616-75B OT404

    BUK95

    Abstract: BUK952R8-30B
    Text: TO -22 0A B BUK952R8-30B N-channel TrenchMOS logic level FET Rev. 3 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK952R8-30B BUK95 BUK952R8-30B

    BUK9520-100A

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9520-100A N-channel TrenchMOS logic level FET Rev. 02 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK9520-100A BUK9520-100A

    BUK9514-55A

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9514-55A N-channel TrenchMOS logic level FET Rev. 02 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK9514-55A BUK9514-55A

    BUK9518-55A

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9518-55A N-channel TrenchMOS logic level FET Rev. 02 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK9518-55A BUK9518-55A

    Untitled

    Abstract: No abstract text available
    Text: BUK95/9610-100B TrenchMOS logic level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.


    Original
    PDF BUK95/9610-100B BUK9510-100B O-220AB) BUK9610-100B OT404

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9511-55A N-channel TrenchMOS logic level FET Rev. 2 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK9511-55A

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK95150-55A N-channel TrenchMOS logic level FET Rev. 02 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK95150-55A

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9518-55A N-channel TrenchMOS logic level FET Rev. 02 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK9518-55A

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9535-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK9535-100A

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK9507-30B N-channel TrenchMOS logic level FET Rev. 02 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original
    PDF BUK9507-30B