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    STMicroelectronics BUV298V

    TRANS NPN 450V 50A ISOTOP
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    STMicroelectronics BUV298AV

    TRANS NPN 450V 50A ISOTOP
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    BUV298 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUV298 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV298 Philips Semiconductors Silicon Diffused Power Transistors Scan PDF
    BUV298A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV298A Philips Semiconductors Silicon Diffused Power Transistors Scan PDF
    BUV298AF STMicroelectronics NPN Transistor Power Module Scan PDF
    BUV298AV STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV298AV STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV298AV STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV298AV Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV298AV Philips Semiconductors Silicon Diffused Power Transistors Scan PDF
    BUV298AV Philips Semiconductors High Speed, High Voltage Transistors Scan PDF
    BUV298AV STMicroelectronics NPN Transistor Power Module Scan PDF
    BUV298AV STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUV298CV STMicroelectronics NPN Transistor Power Module Scan PDF
    BUV298F STMicroelectronics NPN Power Transistor Module Scan PDF
    BUV298V STMicroelectronics NPN transistor power module Original PDF
    BUV298V STMicroelectronics NPN Transistor Power Module Original PDF
    BUV298V STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV298V Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV298V Philips Semiconductors Silicon Diffused Power Transistors Scan PDF

    BUV298 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schematic diagram motor control

    Abstract: schematic diagram motor BUV298V JESD97
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original     		PDF BUV298V 2002/93/EC schematic diagram motor control schematic diagram motor BUV298V JESD97

    BUV298V

    Abstract: No abstract text available
    Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:


    Original     		PDF BUV298V BUV298V

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV  NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    Untitled

    Abstract: No abstract text available
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original     		PDF BUV298V 2002/93/EC

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    welding equipment smps schematic

    Abstract: No abstract text available
    Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298V welding equipment smps schematic

    Untitled

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV

    welding rectifier schematic

    Abstract: schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV welding rectifier schematic schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV

    Untitled

    Abstract: No abstract text available
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original     		PDF BUV298V 2002/93/EC 200ot

    BUV298V

    Abstract: No abstract text available
    Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF BUV298V BUV298V

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE t.'lE D bbS3T31 DD2fl51E 47b H A P X BUV298 V BUV298A(V) SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supply.


    OCR Scan     		PDF bbS3T31 DD2fl51E BUV298 BUV298A

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON û iRâmi©IFlis iû êS BUV298V NPN TRANSISTOR POWER MODULE . NPN TRANSISTOR . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS) • EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298V 048JO

    sot-227a

    Abstract: sot227a 298AV BUV298 BUV298A BUV298AV BUV298V
    Text: bìE D N AMER PHILIPS/DISCRETE DDEÖ51E 47b • APX BUV298 V BUV298A(V) ■ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m o to r co n tro l applications on 220 V to 38 0 V mains supply.


    OCR Scan     		PDF BUV298 BUV298A sot-227a sot227a 298AV BUV298AV BUV298V

    BUV298A

    Abstract: BUV298 T227A
    Text: I I P H I L IP S INTERNATIONAL 4SE D E3 7 1 1 0 0 2 b 0 0 3 1 1 3 7 3 E3PHIN BUV298 V BUV298A(V) T-33-/S SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.


    OCR Scan     		PDF BUV298 BUV298A T-33-/S OT227B 298AIV) typ2500 T227A

    ad 303 transistor

    Abstract: No abstract text available
    Text: rz7 S G S -T H O M S O N R [LiOT iQ £I ^ 7# BUV298AV NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298AV SC04830 ad 303 transistor

    tb rbb

    Abstract: BUV298AF BUV298AV BUV298A
    Text: 3DE ì> m 7RSt1237 QGBDMIM Ô • fZ 7 ^ 7# S G S -T H O M S O N sLTH0M i i N_ U V 2 9 8 A F [Rifln [^@[l[LllCT[^@lROD©S T - 3 3 - 1 5 BUV298AV NPN TRANSISTOR POWER MODULE ■ H IG H C U R R E N T P O W E R B IP O L A R M O D U L E ■ V E R Y L O W Rth J U N C T IO N C A S E


    OCR Scan     		PDF 7R2C1237 UV298AF 33-i5 BUV298AV BUV298AV BUV298AF sc04s30 T-91-20 O-240) tb rbb BUV298AF BUV298A

    SOT-227A

    Abstract: BUV298 BUV298A BUV298AV BUV298V
    Text: PHILIPS INTERNATIONAL HSE D Q 711002b 0031137 3 Q PHIN BUV298 V BU V298A(V) ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supply.


    OCR Scan     		PDF 711002b BUV298 BUV298A SOT-227A BUV298AV BUV298V

    Untitled

    Abstract: No abstract text available
    Text: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298V

    IC SO5

    Abstract: FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F BUV298V JUV298F transistor BC 583
    Text: 30E D • 7121237 G03GMQÔ 2 WÊ SCS-THOMSON J _ Ü ^ H0"S«NJUV298F HLKgüWWi T-3S'i5 BUV298V NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS


    OCR Scan     		PDF JUV298F BUV298V BUV298V BUV298F SC04S30 T-91-20 O-240) IC SO5 FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F JUV298F transistor BC 583

    Untitled

    Abstract: No abstract text available
    Text: / S T SGS-THOMSON c o r a m i * ! BUV298AV NPN TRANSISTOR POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298AV

    Untitled

    Abstract: No abstract text available
    Text: r = 7 ^ 7 S G S -T H O M S O N R m o ra « # BUV298V NPN TRANSISTOR POWER MODULE . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298V

    BUV298CV

    Abstract: No abstract text available
    Text: r z 7 S G S - T H O M Ä 7# S O N B U V2 9 8 CV RfflOGIHimiCTMOSS NPN TRANSISTOR POWER MODULE ADVANCE DATA . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,hJUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV298CV 5c04j4d 7T2T237 BUV298CV