byv27-500
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS BYV27-50 – BYV27-600 ULTRA FAST AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Tamb = 25°C unless otherwise specified Parameter Test Condition Part BYV27-50 55 110 BYV27-150 165 BYV27-300 440 560 BYV27-600 675 BYV27-50 50 BYV27-100
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BYV27-50
BYV27-600
BYV27-100
BYV27-150
BYV27-200
BYV27-300
BYV27-500
byv27-500
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS BYV27-50 – BYV27-200 ULTRA FAST AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Tamb = 25°C unless otherwise specified Parameter Test Condition Part Peak reverse voltage, non-repetitive Value BYV27-50 55 BYV27-100 110 BYV27-150 VRSM
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BYV27-50
BYV27-200
BYV27-100
BYV27-150
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BYV27-200
Abstract: BYV27-100 BYV27-150 BYV27-50 BYV27
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
18-Jul-08
BYV27-200
BYV27-100
BYV27-150
BYV27-50
BYV27
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BYV27-50
Abstract: BYV27-100 BYV27-150 BYV27-200 DIODE WITH SOD CASE BYV27200TR BYV27-200-TR
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
OD-57
MIL-STD-750,
BYV27-200
BYV27-2trademarks
2011/65/EU
BYV27-50
BYV27-100
BYV27-150
DIODE WITH SOD CASE
BYV27200TR
BYV27-200-TR
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Untitled
Abstract: No abstract text available
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
OD-57
MIL-STD-750,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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BYV27-50
Abstract: BYV27-100 BYV27-150 BYV27-200
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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Original
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV27-50
BYV27-100
BYV27-150
BYV27-200
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BYV27-200-TAP
Abstract: No abstract text available
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
OD-57
MIL-STD-750,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
BYV27-200-TAP
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BYV27-200
Abstract: BYV27-50 BYV27-100 BYV27-150 BYV27 BYV-27-100
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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Original
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV27-50
BYV27-100
BYV27-200
BYV27-150
BYV27
BYV-27-100
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PDF
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Untitled
Abstract: No abstract text available
Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package
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BYV27-50,
BYV27-100,
BYV27-150,
BYV27-200
OD-57
MIL-STD-750,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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BYV27-200 DO-41
Abstract: philips 23 Philips 336 TA 2092 N BP317 BYV27-200
Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS Fact Sheet 080 High-quality glass-passivated diodes Glass Bead BYV27-200 competitor investigation This publication offers a direct comparison between Philips Semiconductors’ BYV27-200 Glass Bead diode family and two
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BYV27-200
BYV27-200
BYV27-200,
DO-41
BYV27-200 DO-41
philips 23
Philips 336
TA 2092 N
BP317
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BYV27-200
Abstract: 202 sod57 DS30038
Text: BYV27/50 - BYV27/200 2.0A SUPER-FAST GLASS BODY RECTIFIER Features • · · · · · Hermetically Sealed Glass Body Construction Controlled Avalanche Characteristics Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop
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BYV27/50
BYV27/200
OD-57
OD-57,
MIL-STD-202,
DS30038
BYV27-200
202 sod57
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BYV27
Abstract: BYV27100 BYV27-100 BYV27150 BYV27-150 BYV27200 BYV27-200 BYV27-50
Text: BYV27/. VISHAY Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Hermetically sealed package Applications
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BYV27/.
MILSTD-750,
BYV27-50
BYV27-100
BYV27-150
D-74025
07-Jan-03
BYV27
BYV27100
BYV27-100
BYV27150
BYV27-150
BYV27200
BYV27-200
BYV27-50
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Untitled
Abstract: No abstract text available
Text: BYV27/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component
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BYV27/.
2002/95/EC
2002/96/EC
MILSTD-750,
OD-57
D-74025
21-Jun-05
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Ultra Fast Avalanche Sinterglass Diode
Abstract: 9526 j diode case R-1 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV27-50
Text: BYV27/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component
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BYV27/.
2002/95/EC
2002/96/EC
MILSTD-750,
OD-57
BYV27-50
08-Apr-05
Ultra Fast Avalanche Sinterglass Diode
9526 j
diode case R-1
BYV27
BYV27-100
BYV27-150
BYV27-200
BYV27-50
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Untitled
Abstract: No abstract text available
Text: BYV27 SERIES EPITAXIAL AVALANCHE DIODES D2 PRV : 50 - 200 Volts Io : 2.0 Amperes * * * * * * 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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BYV27
UL94V-O
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: www.eicsemi.com BYV27 SERIES EPITAXIAL AVALANCHE DIODES DO - 41 PRV : 50 - 200 Volts Io : 2.0 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Very fast recovery
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BYV27
DO-41
UL94V-O
MIL-STD-202,
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BYV27-600
Abstract: D25M VR 100K
Text: BYV27-600 VISHAY Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode \ Features • • • • Glass passivated Hermetically sealed axial-leaded glass envelope Low reverse current Ultra fast soft recovery switching Applications Electronic ballast
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BYV27-600
MIL-STD-750,
D-74025
07-Jan-03
BYV27-600
D25M
VR 100K
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PDF
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Untitled
Abstract: No abstract text available
Text: BYV27-600 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed axial-leaded glass envelope • Low reverse current • Ultra fast soft recovery switching • Material categorization:
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BYV27-600
OD-57
MIL-STD-750,
BYV27-600-TR
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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BYV27 Series
Abstract: BYV27-200 DO-41 BYV27-50 BYV27 BYV27-100 BYV27-150 BYV27-200
Text: BYV27 SERIES EPITAXIAL AVALANCHE DIODES DO - 41 PRV : 50 - 200 Volts Io : 2.0 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Very fast recovery Pb / RoHS Free
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BYV27
DO-41
UL94V-O
MIL-STD-202,
BYV27 Series
BYV27-200 DO-41
BYV27-50
BYV27-100
BYV27-150
BYV27-200
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PDF
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BYV27-100
Abstract: BYV27-150 BYV27 BYV27-200 BYV27-50 SOD-57 BYV27 diode DIODE WITH SOD CASE 25NS120
Text: BYV27/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component
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Original
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BYV27/.
2002/95/EC
2002/96/EC
MILSTD-750,
OD-57
BYV27-50
OD-57
BYV27-100
BYV27-150
BYV27
BYV27-200
BYV27-50
SOD-57
BYV27 diode
DIODE WITH SOD CASE
25NS120
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SOD-57
Abstract: BYV27-600
Text: BYV27-600 SINTERED GLASS JUNCTION ULTRAFAST AVALANCHE RECTIFIER VOLTAGE： ：600V CURRENT: 1.6A FEATURE SOD-57 Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability MECHANICAL DATA
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BYV27-600
OD-57
OD-57
400mA;
SOD-57
BYV27-600
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Untitled
Abstract: No abstract text available
Text: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are
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UESI101
UES1102
UES1103
BYV27-50
BYV27-100
BYV27-150
UES1101
100ms
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BYV27
Abstract: BYV27-100 UES1101 BYV27-150 BYV27-50 UESI102 UES1103 BYV-27-100
Text: RECTIFIERS UES1101 üES1102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are
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UES1101
BYV27-50
ES1102
BYV27-100
UES1103
BYV27-150
UESU03
BYV27-50
BYV27
BYV27-150
UESI102
BYV-27-100
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Untitled
Abstract: No abstract text available
Text: RECTIFIERS U ESI 101 UESI102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in m any switching applications. Particularly suited where very fast recovery and low forward voltage are
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UESI102
UES1103
BYV27-50
BYV27-100
BYV27-150
UES1101
UES1102
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