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    NE25139

    Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm


    Original     		PDF NE25139 NE251 NE25139T1U74 24-Hour NE25139 ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13

    NE25339

    Abstract: NE25339-T1 KDB00 uhf microwave fet
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW CRSS: 0.02 pF TYP GPS 20 10 • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm


    Original     		PDF NE25339 NE253 NE25339-T1 OT-143) 24-Hour NE25339 NE25339-T1 KDB00 uhf microwave fet

    FET2

    Abstract: 100E-6 10E-15 C12SAT
    Text: NONLINEAR MODEL NE25339 SCHEMATIC see Page 2 UNITS FOR MODEL PARAMETERS Parameter Units time capacitance inductance resistance voltage current seconds farads henries ohms volts amps FET NONLINEAR MODEL PARAMETERS(1) Parameters FET1 FET2 Parameters FET1 FET2


    Original     		PDF NE25339 C11TH C11DELT C12SAT 100e-6 78e-10 0e-12 0e-15 25e-12 1e-12 FET2 10E-15

    NEC Ga FET marking A

    Abstract: NE25139T1U74 NE25139U NE25139T1U71
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz


    OCR Scan     		PDF NE25139 Vi32S 90CIM NE251 NE25139T1 NE25139U74 24-Hour NEC Ga FET marking A NE25139T1U74 NE25139U NE25139T1U71

    J Fet marking 2 AW

    Abstract: 10E-15
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V gs = 1 V, Ids = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz


    OCR Scan     		PDF NE25339 NE253 NE25339 OT-143) NE25339-T1 J Fet marking 2 AW 10E-15

    u-79

    Abstract: NE25339
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES • • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • Lgi = 1.0 Jim, Lg2 = 1.5 Jim, Wg = 800 Jim


    OCR Scan     		PDF NE25339 NE253 MESF39U79 NE25339T1U79 24-Hour u-79 NE25339

    U73-U74

    Abstract: 14E-14
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz


    OCR Scan     		PDF NE25139 NE251 OT-143) NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 U73-U74 14E-14