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    C30737P Search Results

    C30737P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30737P-230 PerkinElmer Optoelectronics Epitaxial Silicon Avalanche Photodiode Original PDF
    C30737P-500 PerkinElmer Optoelectronics Epitaxial Silicon Avalanche Photodiode Original PDF

    C30737P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD


    Original
    O-C30737PH C30737LH C30737 C30724 Standard-90 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 PDF

    C30737LH-500-92

    Abstract: CERAMIC LEADLESS CHIP CARRIER
    Text: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,


    Original
    C30737PH C30737LH C30737 C30737PH-LH-Rev C30737LH-500-92 CERAMIC LEADLESS CHIP CARRIER PDF

    smd t1A

    Abstract: t1A 13
    Text: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD


    Original
    O-C30737PH C30737LH C30737 C30724 C3072490 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 C30724EH smd t1A t1A 13 PDF

    Untitled

    Abstract: No abstract text available
    Text: Overview PerkinElmer’s new epitaxial EPI Silicon (SI) Avalanche Photodiodes (APDs), C30737P and C30737G, are part of a new family of lower-cost devices based on various size and wavelength-adapted EPI APD chips in plastic SMD and T1 ¾ through-hole housing options.


    Original
    C30737P C30737G, C30737Gseries DTS0408P PDF

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original
    CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E PDF

    PerkinElmer Avalanche Photodiode

    Abstract: PerkinElmer Optoelectronics C30737E-230 C30737E-500 C30737 C30737P-230 C30737P-500
    Text: Optoelectronics C30737 Epitaxial Silicon Avalanche Photodiode Description Applications The C30737 type avalanche photodiode provides high responsivity between 500 nm and 1000 nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area


    Original
    C30737 C30737 LO09/01/04 PerkinElmer Avalanche Photodiode PerkinElmer Optoelectronics C30737E-230 C30737E-500 C30737P-230 C30737P-500 PDF