C38 diode
Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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470on.
AN215A,
MRF1570NT1
MRF1570FNT1
MRF1570T1
MRF1570FT1
C38 diode
Z15 marking diode
z15 Diode glass
C36 marking
diode marking c34
c38 transistor
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z15 Diode glass
Abstract: Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263
Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570NT1
z15 Diode glass
Z14 j
b5c15
C2233
AN721
diode zener c29
A113
J042
AN215A
AN3263
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marking code C37
Abstract: transistor c37 marking code C74 marking code C34 complementary npn-pnp NPN PNP sot-563 dual npn 500ma vce max 100 ic max 100MA NPN pnp and npn amplifier marking code D
Text: Central CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS SOT-563 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak)
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CMLT3410
CMLT7410
CMLT3474
OT-563
CMLT3410
CMLT7410
CMLT3474
100MHz
CMLT3410)
CMLT7410)
marking code C37
transistor c37
marking code C74
marking code C34
complementary npn-pnp
NPN PNP sot-563
dual npn 500ma
vce max 100 ic max 100MA NPN
pnp and npn
amplifier marking code D
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Untitled
Abstract: No abstract text available
Text: CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT DUAL LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR dual devices are low VCE(SAT) silicon transistors in a PICOmini surface mount package designed for small signal
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CMLT3410
CMLT7410
CMLT3474
CMLT3410:
CMLT7410:
CMLT3474:
OT-563
100mA
500mA
100MHz
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transistor c37
Abstract: marking code C37 marking code C34 marking code C74 C34 MARKING pin ic marking code 60
Text: CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT DUAL LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR dual devices are low VCE(SAT) silicon transistors in a PICOmini surface mount package designed for small signal
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CMLT3410
CMLT7410
CMLT3474
CMLT3410:
CMLT7410:
CMLT3474:
OT-563
100mA
500mA
100MHz
transistor c37
marking code C37
marking code C34
marking code C74
C34 MARKING
pin ic marking code 60
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diode zener c26
Abstract: A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570NT1 MRF1570T1 mrf1570
Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570NT1
diode zener c26
A113
AN211A
AN215A
AN721
MRF1570FNT1
MRF1570N
MRF1570T1
mrf1570
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marking code C37
Abstract: transistor c37 dual npn 500ma CMLT3410 CMLT3474 CMLT7410 marking code C34
Text: Central CMLT3410 CMLT3410G* NPN CMLT7410 CMLT7410G* PNP CMLT3474 CMLT3474G* NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: These dual devices are low VCE(SAT) silicon transistors in a PICOmini™ surface mount package
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CMLT3410
CMLT3410G*
CMLT7410
CMLT7410G*
CMLT3474
CMLT3474G*
OT-563
CMLT3410:
CMLT7410:
CMLT3474:
marking code C37
transistor c37
dual npn 500ma
marking code C34
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Untitled
Abstract: No abstract text available
Text: CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL, LOW VCE SAT TRANSISTORS DESCRIPTION: These CENTRAL SEMICONDUCTOR dual devices are low VCE(SAT) silicon transistors in an SOT-563 surface mount package designed for small signal
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CMLT3410
CMLT7410
CMLT3474
OT-563
CMLT3410:
CMLT7410:
CMLT3474:
OT-563
100mA
500mA
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J042
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570T1
MRF1570NT1
MRF1570FNT1
MRF1570FT1
J042
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zener diode marking c24
Abstract: transistor c36 j063
Text: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570N
zener diode marking c24
transistor c36
j063
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF1570T1 Rev. 6, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF1570T1
MRF1570NT1/FNT1.
MRF1570FT1
MRF1570T1
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150 watts power amplifier layout
Abstract: 3.40 pf capacitor marking Z4 MOTOROLA 934 zener diode marking 4x A113 AN211A AN215A AN721 MRF1570FT1
Text: Freescale Semiconductor Technical Data Document Number: MRF1570T1 Rev. 6, 5/2006 Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF1570T1
MRF1570NT1/FNT1.
MRF1570FT1
MRF1570T1
150 watts power amplifier layout
3.40 pf capacitor
marking Z4
MOTOROLA 934
zener diode marking 4x
A113
AN211A
AN215A
AN721
MRF1570FT1
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transistor c37
Abstract: marking code C37 CMLT3410 CMLT3474 CMLT7410 marking code C74 v30010
Text: CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT DUAL LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR dual devices are low VCE(SAT) silicon transistors in a PICOmini surface mount package designed for small signal
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CMLT3410
CMLT7410
CMLT3474
CMLT3410:
CMLT7410:
CMLT3474:
OT-563
100MHz
CMLT3410)
CMLT7410)
transistor c37
marking code C37
marking code C74
v30010
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these
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MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570NT1
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PTFA043002
Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The
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PTFA043002E
PTFA043002
300-watt,
H-30275-4
PTFA043002E
SCHEMATIC DIAGRAM 3.3kv
type 103 capacitor, 2kv RF, 1300 pf
marking us capacitor pf l1
BCP56
LM7805
300WPEP
P33K
TRANSISTOR 023 3010
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1794-VHSC
Abstract: 1794-PS13 Allen-Bradley 1794-irt8 manual Allen-Bradley 1794-irt8 1794-IRT8 specification 1794-TB3G WIRING DIAGRAM 1794-IRT8 1794-IE8 Allen-Bradley 1794-of4i manual Allen-Bradley 1794-ie8 manual
Text: Technical Data FLEX I/O and FLEX Integra 1794 Series and 1793 Series Flexible, Inexpensive, / ; ,270 DQG )/(; ,QWHJUD70 DUH IOH[LEOH ORZFRVW PRGXODU ,2 V\VWHPV and Compact IRU GLVWULEXWHG DSSOLFDWLRQV WKDW RIIHU DOO WKH IXQFWLRQV RI ODUJHU UDFNEDVHG ,
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QWHJUD70
1794-VHSC
1794-PS13
Allen-Bradley 1794-irt8 manual
Allen-Bradley 1794-irt8
1794-IRT8 specification
1794-TB3G WIRING DIAGRAM
1794-IRT8
1794-IE8
Allen-Bradley 1794-of4i manual
Allen-Bradley 1794-ie8 manual
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Untitled
Abstract: No abstract text available
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The
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PTFA043002E
PTFA043002
300-watt,
H-30275-4
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Untitled
Abstract: No abstract text available
Text: ADS 783 ADS7834 4 SBAS098A – JANUARY 1998 – REVISED SEPTEMBER 2003 12-Bit High-Speed, Low-Power Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● ● ● ● ● ● ● ● ● The ADS7834 is a 12-bit sampling analog-to-digital converter A/D complete with sample/hold, internal 2.5V reference,
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ADS7834
SBAS098A
12-Bit
500kHz
12-BITS
ADS7834
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Untitled
Abstract: No abstract text available
Text: ADS 783 ADS7834 4 SBAS098A – JANUARY 1998 – REVISED SEPTEMBER 2003 12-Bit High-Speed, Low-Power Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● ● ● ● ● ● ● ● ● The ADS7834 is a 12-bit sampling analog-to-digital converter A/D complete with sample/hold, internal 2.5V reference,
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ADS7834
SBAS098A
12-Bit
ADS7834
500kHz
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PTFA043002E
Abstract: PTFA043002 LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The
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PTFA043002E
PTFA043002
300-watt,
H-30275-4
PTFA043002E
LM7805
type 103 capacitor, 2kv RF, 1300 pf
BCP56
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diode marking code c34
Abstract: AP561 cdm 12.1 laser
Text: AP561 0.7-2.9 GHz WiMAX 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 12.5 dB Gain • 1.5% EVM @ 30 dBm Pout Functional Diagram The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage
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AP561
AP561
JESD22-A114
JESD22-C101
J-STD-020
1-800-WJ1-4401
diode marking code c34
cdm 12.1 laser
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226 35K capacitor
Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120R6
226 35K capacitor
capacitor 226 35K
C40 Sprague
105 35K capacitor
R 226 35k
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MARKING C33
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF5S19130HR3
MRF5S19130HSR3
MARKING C33
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K 2645 schematic circuit
Abstract: diode t25 4 j3 776MHz AP561-PCB900 AP561-PCB2500
Text: AP561 0.7-2.9 GHz 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 13 dB Gain @ 2.6 GHz • 1.5% EVM @ 30 dBm Pout • +12 V Supply Voltage • Lead-free/green/RoHS-compliant 5x6 mm power DFN package Applications
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AP561
AP561
JESD22-A114
JESD22-C101
J-STD-020
K 2645 schematic circuit
diode t25 4 j3
776MHz
AP561-PCB900
AP561-PCB2500
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