CASE14 Search Results

CASE14 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MLED96 Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B	Original	PDF	ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
2N5641 Abstract: No abstract text available Text: JBe-tnl-donduoioi Lpioducti, Una. fc/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5641 The RF Line 7.0 W - 175MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . designed primarily for wideband large-signal amplifier stages in	Original	PDF	2N5641 175MHz -30Vdc, 2N5641
VTB5050J Abstract: VTB5051J 5051j Text: 5bE D 3 D 3 D b O cl 0 0 0 1 0 M 2 VTB Process Photodiodes E G 8> 6 521 VCT VTB5050J, 5051J VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “flat" win dow, three lead TO-5 package. Chip is isolated from the case. The third lead	OCR Scan	PDF	3D30b0^ 00010M2 VTB5050J, 5051J CASE14A VTB5050J VTB5051J VTB5050J VTB5051J 5051j
Untitled Abstract: No abstract text available Text: 303Db 0T 0 0 0 1 0 4 4 3T4 • VCT SbE D VTB5050UVJ, 1UVJ VTB Process Photodiodes 4 1 -S I E G & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from	OCR Scan	PDF	303Db VTB5050UVJ, CASE14A VTB5050UVJ
VTB5050J Abstract: VTB5051J VTB505U 5051J PIR 320 Vactec 25 PIR 148 Text: BQBQbO'î 0001042 521 « V C T 5bE » VTB Process Photodiodes V T B 5 0 5 0 J , 5 0 51 J E 6 & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “fla f win dow, three lead TO-5 package. Chip is isolated from the case. The third lead	OCR Scan	PDF	VTB5050J, 5051J CASE14A VTB505U VTB5051J 9x1012 8x1013 VTB5050J VTB5051J VTB505U 5051J PIR 320 Vactec 25 PIR 148
powec rm 1110 Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor	OCR Scan	PDF	111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
IVA14208ST Abstract: No abstract text available Text: • 4447504 D01D332 T23 H H P A HEWLETT-PACKARD/ CMPNTS blE D W A ffi H E W LETT 1 "H A P A CK A R D Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth;	OCR Scan	PDF	D01D332 IVA-14208 IVA-14228 IVA-14208: IVA-14228: IVA-14228 IVA-14 IVA-14208-STR IVA-14208-TR1 IVA-14208-TR2 IVA14208ST
Untitled Abstract: No abstract text available Text: f J B l HEW LETT WSEM P A C K A R D Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features Description • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth; 3.4 Gbits/s Data Sates • High Gain: 24 dB Typical	OCR Scan	PDF	IVA-14208 IVA-14228 IVA-14208: IVA-14228: IVA-14 IVA-14228 IVA-14208-STR IVA-14208-TRi IVA-14228-STR