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    cep6060n

    Abstract: No abstract text available
    Text: CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS ON = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		PDF CEP6060N/CEB6060N O-220 O-263 cep6060n