CGHV27200 Search Results

CGHV27200 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGHV27200F		Cree	RF FETs, Discrete Semiconductor Products, HEMT RF 50V 200W 2.7GHZ 440162		Original	PDF
CGHV27200-TB		Cree	RF FETs, Discrete Semiconductor Products, HEMT RF 50V 100W 2.7GHZ 440162		Original	PDF

CGHV27200 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a	Original	PDF	CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB
Untitled Abstract: No abstract text available Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz	Original	PDF	CGHV27200 CGHV27200 CGHV27 GHV27200P
Untitled Abstract: No abstract text available Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a	Original	PDF	CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB
Untitled Abstract: No abstract text available Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a	Original	PDF	CGHV27200 CGHV27200 CGHV27 GHV27200P
Untitled Abstract: No abstract text available Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz	Original	PDF	CGHV27200 CGHV27200 CGHV27 GHV27200P
Untitled Abstract: No abstract text available Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz	Original	PDF	CGHV27200 CGHV27200 CGHV27 GHV27200P