Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CMP5585025D Search Results

    CMP5585025D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMPA5585025D

    Abstract: vd2b
    Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		PDF CMPA5585025D CMP5585025D CMPA5585025D vd2b

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		PDF CMPA5585025D CMP5585025D CMPA5585025D