CMOD2004
Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
CMOD2004
CPD80V
CMDD2004
1N3070
CMLD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
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C 704 diode
Abstract: DIODE R3 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
C 704 diode
DIODE R3
1N3070
CMDD2004
CMLD2004
CMOD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
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1N3070
Abstract: CMDD2003 CMDD2004 CMPD2003 CMPD2004 CPD80
Text: Central PROCESS TM Semiconductor Corp. CPD80 Switch Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization
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CPD80
CMPD2003
CMPD2004
1N3070
CMDD2003
CMDD2004
22-October
1N3070
CMDD2003
CMDD2004
CMPD2003
CMPD2004
CPD80
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CMOD2004
Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
CMOD2004
1N3070
CMDD2004
CMLD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
CPD80V
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1N3070
Abstract: DIODE 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Text: Central TM Semiconductor Corp. PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
1N3070
DIODE 1N3070
CMDD2004
CMLD2004
CMOD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
CPD80V
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CP588V
Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Text: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: [email protected] http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.
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CPD48
CPD76
CPD78
CPD80
CPD83
CPD88
CPD91
CPD92
CPD96
CP188
CP588V
CPD76
CPD96
CP-392V
CP307
CP188
CP191
CPD48
CPD80
CPD91
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BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
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1N456
CPD64
1N456A.
1N457
1N457A.
1N458
BF244 datasheet
2N5133 equivalent
MPS5771
BD345
BD347
BF244
2n5248
bf256
2N3304
2n5910
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UJT 2n3904
Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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2N2645
Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
Text: PCN #: 119 Notification Date: 16 December 2010 mailto:[email protected] http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.
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CPD83V-1N914-WN
CPD83V-1N914A-WN
CPD83V-CMPD7000-WS
CPD83V-1N4148-WS
CPD83V-1N914-WR
CPD92X-CMPD6263-WR
CPZ25-CMZ5937B-WN
CPZ25-CMZ5940B-WN
CPZ25-1N4752A-WN
CPZ25-1N5918B-WN
2N2645
cpd83v-cmpd7000-ws
1N3070
CPZ25
CPD83V-1N4148-WN
CP191V-2N2222A-WN
CPZ25-CMZ5937B-WR
CPD83V
CPD83V-1N4148-WS
CPD98V
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M140 Blue Laser Diode
Abstract: 12 volt electronic ballast for fluorescent light ledinta0350c425 philips xitanium 150W 1-10V XI040C070V056CNJ1 M140 laser diode t5 94v-0 tv philips
Text: Lighting Electronics Atlas A Full Line Catalog of LED Drivers, LED Modules, Ballasts and Lighting Controls 2014-2015 Contents Philips Advance LED Drivers Page 1-1 Philips LED Modules Page 2-1 Philips Advance Electronic Fluorescent Ballasts Page 3-1 Philips Advance Electronic Fluorescent Controllable Ballasts
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F40BX
FT40DL/RS
FT50W/2G11/RS
PL-L50W
F50BX/RS
FT55W/2G11
PL-L55W
F55BX
FT55DL
6-39W
M140 Blue Laser Diode
12 volt electronic ballast for fluorescent light
ledinta0350c425
philips xitanium 150W 1-10V
XI040C070V056CNJ1
M140 laser diode
t5 94v-0 tv philips
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Leviton
Abstract: EL7315A1019 SD4008-120 V2000FAMU avab Designer Series WPC-5721 ZP600FAM120 Occupancy Sensor LP-2800 LITHONIA LEQ
Text: Advance Dimming Ballasts Control Compatibility Guide Advance Mark X Powerline and Mark VII® 0-10V Dimming Ballasts are Compatible with Controls from 30+ Manufacturers Occupancy Sensors Occupancy sensors automatically turn lights on/off or bring lights to
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EL-2010-AA-R01
Leviton
EL7315A1019
SD4008-120
V2000FAMU
avab Designer Series
WPC-5721
ZP600FAM120
Occupancy Sensor
LP-2800
LITHONIA LEQ
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Untitled
Abstract: No abstract text available
Text: Central CMOD2004 Semiconductor Corp. SURFACE MOUNT ULTRAmini™ HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD2004 type is a high voltage silicon switching diode man ufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount pack
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CMOD2004
OD-523
CPD80
13-November
OD-523
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Untitled
Abstract: No abstract text available
Text: Central" CMXD2004 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004 type contains three 3 Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial
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CMXD2004
OT-26
CPD80
OT-26
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marking code pa sot-26
Abstract: marking pa sot-26
Text: Central CMXD2004TO Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004TO consists of three 3 Isolated High Voltage Silicon Switching Diodes arranged
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CMXD2004TO
OT-26
OT-26
X04TO
14-November
marking code pa sot-26
marking pa sot-26
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CMSD2004S
Abstract: No abstract text available
Text: Central CMSD2004S Semiconductor Corp. SURFACE MOUNT SUPERmini DUAL, SILICON SWITCHING DIODES SERIES CONNECTION DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process,
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CMSD2004S
CPD80
OT-323
OT-323
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DIODE RL 207
Abstract: LR 207
Text: Central CMHD2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD2003 is a Silicon Switching Diode, manufactured by the epitaxial planar process, epoxy molded in a SOD-123 surface mount package, designed for applications requiring high voltage capability.
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CMHD2003
OD-123
100mA
CPD80
31-October
OD-123
DIODE RL 207
LR 207
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c24 diode
Abstract: No abstract text available
Text: Central' CMDD2004 Semiconductor Corp. SUPERmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD2004 type is a high voltage silicon switching diode man ufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount pack
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CMDD2004
100mA
CPD80
31-October
CMDD2004
OD-323
OD-323
c24 diode
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SOD-80 Marking Code
Abstract: sod80
Text: Central' CLL2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxial planar process, designed for applica tions requiring high voltage capability.
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CLL2003
OD-80
100mA
200mA
CPD80
26-September
OD-80
SOD-80 Marking Code
sod80
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marking code 327 sot23
Abstract: 326 SOT
Text: Central' CMPD2005S Semiconductor Corp. SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a
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CMPD2005S
OT-23
CPD80
OT-23
marking code 327 sot23
326 SOT
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MARKING CODE R7 DIODE
Abstract: Js MARKING CODE SOT23 Diode marking CODE JS MARKING D53 SOT23 MARKING CODE R7 marking db6 Marking Code js ON MARKING CODE 225
Text: CMPD2003 CMPD2003C CMPD2003S Central CMPD2004 CMPD2004A CMPD2004C CMPD2004S Semiconductor Corp. DESCRIPTION: SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE The Central Semiconductor CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S
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CMPD2003
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004A
CMPD2004C
CMPD2004S
CMPD2003,
CMPD2003C,
CMPD2003S,
MARKING CODE R7 DIODE
Js MARKING CODE SOT23
Diode marking CODE JS
MARKING D53 SOT23
MARKING CODE R7
marking db6
Marking Code js
ON MARKING CODE 225
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sot143 114
Abstract: No abstract text available
Text: Central BAW101 Semiconductor Corp. DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is
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BAW101
OT-143
25haracteristic
CPD80
OT-143
sot143 114
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Untitled
Abstract: No abstract text available
Text: Typical Electrical Characteristic Curves Page Page Characteristic Curve Index . . CP108 . . CP117 . . CP147 . .
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CP108
CP117
CP147
CP176
CP188
CP191
CP192
CP195
CP206
CP207
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marking code diode ak
Abstract: diode marking code c3
Text: Central CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO Semiconductor Corp. SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD2004 SERIES contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial
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CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
marking code diode ak
diode marking code c3
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