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    1uF 0603 X7R

    Abstract: 6TPD470M CRCW06039091F LM20124 LM20133 LM20134 LM20144 SPM6530T-1R5M100 CRCW06031R0J-e3
    Text: National Semiconductor Application Note 1751 Daniel Tennant and Dennis Hudgins November 9, 2007 Introduction current carrying capability. The purpose of this design is to maximize the efficiency therefore, the choice of small value inductors with lower series resistance DCR can be examined provided the output current plus one-half the peak to


    Original     		SPM6530T-1R5M100 AN-1751 1uF 0603 X7R 6TPD470M CRCW06039091F LM20124 LM20133 LM20134 LM20144 CRCW06031R0J-e3 PDF

    CRCW06031R0J-e3

    Abstract: VJ0603Y471KXXA C3225X5R0J107 C3216JB0J476 CRCW06039312F VJ0603Y272KXA SPM6530T-1R5M100 VJ0402G LM20123 LM20143
    Text: National Semiconductor Application Note 1747 Daniel Tennant and Dennis Hudgins November 9, 2007 Introduction carrying capability. The purpose of this design is to maximize the efficiency therefore, the choice of small value inductors with lower series resistance DCR can be examined provided


    Original     		SPM6530T-1R5M100 AN-1747 CRCW06031R0J-e3 VJ0603Y471KXXA C3225X5R0J107 C3216JB0J476 CRCW06039312F VJ0603Y272KXA VJ0402G LM20123 LM20143 PDF

    C3216JB0J476M

    Abstract: crcw04021002fe3 VJ0402G GRM155R61A105KE15 SPM6530T-1R5M100 C3216JB0J476 6TPE680MI LM20125 LM20145 crcw04021002f-e3
    Text: National Semiconductor Application Note 1752 Daniel Tennant and Dennis Hudgins November 13, 2007 Introduction smaller than 1.5 µH can be examined, provided the output current plus one-half the peak to peak ripple current does not exceed the device current limit. Examining several inductor


    Original     		SPM6530T-1R5M100 LM20125 LM20125, LM20145 AN-1752 C3216JB0J476M crcw04021002fe3 VJ0402G GRM155R61A105KE15 C3216JB0J476 6TPE680MI LM20125 crcw04021002f-e3 PDF