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    CRF240 Search Results

    CRF240 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRF24010 Cree 10 W, SiC RF Power MESFET Original PDF
    CRF-24010 Cree Class A/B 10 W SiC MESFET RF Transistor Original PDF
    CRF-24010-001 Cree FET Transistor, 10W SIC RF Power MESFET Original PDF
    CRF-24010-101 Cree FET Transistor, 10W SIC RF Power MESFET Original PDF
    CRF24010D Cree 10 W SiC RF Power MESFET Die Original PDF
    CRF24010FE Cree RF FETs, Discrete Semiconductor Products, 10W RF SIC MESFET FLANGED 440166 Original PDF
    CRF24010PE Cree RF FETs, Discrete Semiconductor Products, 10W RF SIC MESFET PILL 440196 Original PDF
    CRF24010-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, IC MESFET SIC 10W TEST FIXTURE Original PDF
    CRF24060 Cree 60 W, SiC RF Power MESFET Original PDF
    CRF-24060 Cree 60 W SiC RF Power MESFET Original PDF
    CRF24060D Cree 60 W SiC RF Power MESFET Die Original PDF
    CRF24060FE Cree RF FETs, Discrete Semiconductor Products, 10W RF SIC MESFET FLANGED 440193 Original PDF
    CRF24060-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, IC MESFET SIC 60W TEST FIXTURE Original PDF

    CRF240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D

    30639

    Abstract: CuMoCu Immo 65808 TH 2066.4 83348 CRF24010 CRF24010D 98737 transistor 13602
    Text: CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CRF24010D CRF24010 CRF240 CRF24010D 30639 CuMoCu Immo 65808 TH 2066.4 83348 98737 transistor 13602

    95160

    Abstract: CuMoCu 21864 300G 74382 85713 CRF24060 CRF24060D F240 40014
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D 95160 CuMoCu 21864 300G 74382 85713 F240 40014

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    TH 2066.4

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CRF24010D CRF24010 CRF240 CRF24010D TH 2066.4

    TC 9164 N

    Abstract: 95160 85713 CuMoCu CRF24060 CRF24060D F240 08816
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D TC 9164 N 95160 85713 CuMoCu F240 08816

    ATC1206

    Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F ATC1206 AVX08051C222MAT2A JESD22-A114 CRF24010F HI1206 DSA00291593.txt

    C17AH

    Abstract: CRF24060F CRF24060
    Text: PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 C17AH CRF24060F

    60522

    Abstract: 8822 TRANSISTOR CuMoCu CRF24010 CRF24010D 61256 30639
    Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CRF24010D CRF24010 CRF240 CRF24010D 60522 8822 TRANSISTOR CuMoCu 61256 30639

    CRF24060

    Abstract: CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers
    Text: CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers

    25V/FTP 50210

    Abstract: CRF24060F
    Text: PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 25V/FTP 50210 CRF24060F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    CRF24010F

    Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324
    Text: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F CRF24010F 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN 127324

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    127324

    Abstract: No abstract text available
    Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation


    Original     		PDF CRF-24010-001 CRF-24010-101 CRF-24010 127324

    Cree Microwave

    Abstract: CRF-24010 CRF-24010-001 CRF-24010-101
    Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage


    Original     		PDF CRF-24010-001 CRF-24010-101 CRF-24010 Cree Microwave CRF-24010-001 CRF-24010-101

    127324

    Abstract: CRF-24010-101 42676 Cree Microwave 121-985 br 354 428 Ts 537 744 231 091 CRF-24010 CRF-24010-001
    Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation


    Original     		PDF CRF-24010-001 CRF-24010-101 CRF-24010 127324 CRF-24010-101 42676 Cree Microwave 121-985 br 354 428 Ts 537 744 231 091 CRF-24010-001

    169113

    Abstract: 174867 173425
    Text: CRF-24060-101 60 W SiC RF Power MESFET PRELIMINARY Features Applications • • • • • • • • • • • • • • 13 dB Small Signal Gain 50 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 2.7 GHz Operation


    Original     		PDF CRF-24060-101 CRF-24060 169113 174867 173425

    Untitled

    Abstract: No abstract text available
    Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage


    Original     		PDF CRF-24010-001 CRF-24010-101 CRF-24010

    CRF-24010-101

    Abstract: CRF-24010 CRF-24010-001 88933 42676
    Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage


    Original     		PDF CRF-24010-001 CRF-24010-101 CRF-24010 CRF-24010-101 CRF-24010-001 88933 42676

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Cree Microwave

    Abstract: CRF-24060 silicon carbide transistor 20607 20607 ma 75 809
    Text: CRF-24060-101 60 W SiC RF Power MESFET PRELIMINARY Features Applications • • • • • • • • • • • • • • 13 dB Small Signal Gain 50 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 2.7 GHz Operation


    Original     		PDF CRF-24060-101 CRF-24060 Cree Microwave silicon carbide transistor 20607 20607 ma 75 809

    utc 1018

    Abstract: UF1050B-IC-E uf1050 DEV-SYS-1852-1A-ND UF1050A CB-OEMSPA311X-04 cb-oemspa332x-02 Bluetooth spp Price unifi csr CME6005
    Text: Universal Time Code UTC Receivers and Demo Boards C-MAX Solutions provide a universal time code receiver with very low power operation for Radio Controlled Time applications. The CME8000 provides a simple solution for worldwide operation with integrated Crystal and


    Original     		PDF CME8000 100uA CME6005 100uA, 28-SSOP 561-1007-5-ND 561-1008-1-ND 561-1008-2-ND§ 561-1015-ND UF1050A-IC-E utc 1018 UF1050B-IC-E uf1050 DEV-SYS-1852-1A-ND UF1050A CB-OEMSPA311X-04 cb-oemspa332x-02 Bluetooth spp Price unifi csr