CXK79M36C163GB Search Results

CXK79M36C163GB Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CXK79M36C163GB		Sony	16Meg 1x2 LVCMOX I/O (512K x 36)		Original	PDF
CXK79M36C163GB		Sony	Memory-sigmaram 16meg 1x2 Lvcmox I/o (512k x 36)		Original	PDF
CXK79M36C163GB-33		Sony	18Mb 1x2Lp LVCMOS High Speed Synchronous SRAM(512Kb x 36)		Original	PDF
CXK79M36C163GB-4		Sony	18Mb 1x2Lp LVCMOS High Speed Synchronous SRAM(512Kb x 36)		Original	PDF
CXK79M36C163GB-5		Sony	18Mb 1x2Lp LVCMOS High Speed Synchronous SRAM(512Kb x 36)		Original	PDF

CXK79M36C163GB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CXK79M36C163GB Abstract: CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5 Text: SONY ΣRAM CXK79M36C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 33/4/5 Preliminary Description The CXK79M36C163GB is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in compliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAM™ devices. It integrates input registers,	Original	PDF	CXK79M36C163GB 512Kb CXK79M36C163GB CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5
CXK79M18C163GB Abstract: CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M36C163GB CXK79M36C163GB-33 CXK79M36C163GB-4 Text: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 16Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/44 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words	Original	PDF	CXK79M36C163GB CXK79M18C163GB 512Kb CXK79M36C163GB IDD-33 IDD-44 CXK79M18C163GB CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M36C163GB-33 CXK79M36C163GB-4
a7w29 Abstract: CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5 CXK79M18C163GB CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M18C163GB-5 CXK79M36C163GB Text: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words	Original	PDF	CXK79M36C163GB CXK79M18C163GB 512Kb CXK79M36C163GB IDD-33 IDD-44 a7w29 CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5 CXK79M18C163GB CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M18C163GB-5
Untitled Abstract: No abstract text available Text: SONY ΣRAM CXK79M36C163GB CXK79M18C163GB ΣRAMs: 16Mb 1x2 LVCMOS I/O 512K x 36 or 1M x 18 Organization 33/4/44 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. They are manufactured in compliance with	Original	PDF	CXK79M36C163GB CXK79M18C163GB
Untitled Abstract: No abstract text available Text: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words	Original	PDF	CXK79M36C163GB CXK79M18C163GB 512Kb CXK79M36C163GB -10uA -20uA