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    IRF130

    Abstract: irf131 142SA
    Text: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		D0DS074 IRF130/131/132/133 IRF130 IRF131 IRF132 IRF133 00US435 F--13 142SA PDF