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    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307010 PDF