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    2sc3623

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


    Original     		PDF 2SC3623, 2SC3623) 2SC3623A) 2SC3623 2SC3623A

    2SC3623

    Abstract: 2SC3623A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    d1352

    Abstract: 2sc3623 2SC3623A d13521ej4v0ds00
    Text: DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


    Original     		PDF 2SC3623, 2SC3623) 2SC3623A) 2SC3623 2SC3623A d1352 2SC3623A d13521ej4v0ds00