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    D1947

    Abstract: D1947A 2SD1947A
    Text: D1947A TOSHIBA Transistor Silicon NPN Epitaxial Type D1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)


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    2SD1947A D1947 D1947A 2SD1947A PDF

    D1947A

    Abstract: D1947 2SD1947A
    Text: D1947A 東芝トランジスタ シリコンNPNエピタキシャル形 D1947A 通 信 工 業 用 ○ 大電流スイッチング用 ○ ランプソレノイド駆動用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE sat = 0.3 V (最大) (IC = 5 A)


    Original
    2SD1947A 2-10R1A 20070701-JA D1947A D1947 2SD1947A PDF

    D1947

    Abstract: 2SD1947A dsae00215
    Text: D1947A TOSHIBA Transistor Silicon NPN Epitaxial Type D1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)


    Original
    2SD1947A D1947 2SD1947A dsae00215 PDF

    d1947

    Abstract: D1947A
    Text: D1947A TOSHIBA Transistor Silicon NPN Epitaxial Type D1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)


    Original
    2SD1947A 2-10R1A d1947 D1947A PDF

    D1947A

    Abstract: No abstract text available
    Text: D1947A TOSHIBA Transistor Silicon NPN Epitaxial Type D1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 to 1500 IC = 1 A • Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)


    Original
    2SD1947A D1947A PDF