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    onsemi NZD8V2MUT5G

    ALLOY ZENER DFN0201
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    DigiKey NZD8V2MUT5G Cut Tape 10,000 1
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    NZD8V2MUT5G Digi-Reel 10,000 1
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    NZD8V2MUT5G Reel 10,000 10,000
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    Avnet Americas NZD8V2MUT5G Reel 9 Weeks 30,000
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    Mouser Electronics NZD8V2MUT5G
    • 1 $0.22
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    Newark NZD8V2MUT5G Bulk 10,000
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    Flip Electronics NZD8V2MUT5G 240,000
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    Vishay Semiconductors BZW03D8V2-TR

    DIODE ZENER 8.2V 1.85W SOD64
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    Vishay Semiconductors BZT03D8V2-TAP

    TVS DIODE 6.5VWM 12.6VC SOD57
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    Vishay Semiconductors BZW03D8V2-TAP

    DIODE ZENER 8.2V 1.85W SOD64
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    Carlo Gavazzi Holding AG CTD8V2005AXXX

    Current Transformers CURRENT TRANSFORMER 200:5A
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    Mouser Electronics CTD8V2005AXXX
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    Newark CTD8V2005AXXX Bulk 3
    • 1 $141
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    D8V2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bzt03

    Abstract: BZT03 27
    Text: Tem ic S e m i c o n d u c t o r s SODS7 Zener- and Suppressor Diodes Electrical Characteristics VZ r Z ±10% Part Number - a V ly p ! and Tighter Toterance Available on Request Ir ’tttv Z a tlz BZT03/D6V2 6.2 6.8 ' V CL)R l) Q Max. I r at V r 2) k tm Clamping


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    PDF BZT03/D6V2 BZT03/D6V8 BZT03/D7V5 BZT03/D8V2 BZT03/D9V1 BZT03/D10 BZT03/D11 BZT03/D12 BZT03/D13 BZT03/D15 bzt03 BZT03 27

    bzp 650 c10

    Abstract: bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24
    Text: NAUKOWO- PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW ELEMENTY PÓLPRZEWODNIKOWE Katalog wyrobów CEMI 1983/1984 C z ç é é I ELEMENTY DYSKRETNE Warszawa 1983 r. SPI S TRECCI Str. Od Wydawcy .


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    PDF NTCI11 TC212 NTC220 NTC22I NTC220 NTC50I bzp 650 c10 bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24

    Katalog CEMI

    Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
    Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby


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    BTP 10/400

    Abstract: C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109
    Text: DIODY I TYRYSTORY W ykaz oznaczeñ param etró w technicznych Cp pojemnoáó diody przy okreálonym napigciu wsteeznym W . V stoaunek pojemnoáci ÜR2/ di j» krytyczna stromosé naraatania prqdu przewodzenia fp Ip I HJ IPRM IPSM *0 •^GT *0 ZR ÍTT


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    PDF T0220 BACE95, BAE795 BACE95R, BAE795R BADE95, BAE995 BABE95, BAE895 BAV70 BTP 10/400 C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109

    Q62702-Z686

    Abstract: z682 Z848 z688 bzx c36 Q62702-Z683 Q62702-Z851 Q62702-Z693 z850 Q62702-Z692
    Text: BZX55 Silicon planar Z-Diode BZX 55 is a silicon planar Z -d io d e in a glass-case 51 A 2 DIN 418 8 0 D O -7 , for stabilizing and lim itin g voltages as w e ll as fo r generating reference voltages at low pow er requirements. The planar technique ensures a very lo w reverse current level,


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    PDF BZX55 BZX55 Q62702-Z686 z682 Z848 z688 bzx c36 Q62702-Z683 Q62702-Z851 Q62702-Z693 z850 Q62702-Z692

    BZP620 C10

    Abstract: BZP620-C12 BZP620C BZP620-C10 BZP620 BZP620-D15 BZP620-D6V8 bzp620c10 BZP620-D12 BZP620-C18
    Text: 26- 74/2 STABILISTORY BZP620-C, BZP620-D SWW 1156-142 Diody krzem ow e Z enera stabilistory stopow e áredniej mocy sq przeznaczone do p racy glów nie w uklad ach ograniczaj^cych napiçcie oraz w stabilizatorach napiçcia. Stabilistory BZP620-C m ajq tolerancjç napiçcia stabilizacji TJZ ± 5%.


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    PDF BZP620-C, BZP620-D BZP620-C BZP620-D BZP620-C5V1 BZP620-C5V6 BZP620-C6V2 BZP620-C6V8 10apià BZP620 C10 BZP620-C12 BZP620C BZP620-C10 BZP620 BZP620-D15 BZP620-D6V8 bzp620c10 BZP620-D12 BZP620-C18

    BZW03

    Abstract: D3639 bzwo3
    Text: Tem ic Semiconductors SOD64 Zener- and Suppressor Diodes continued Electrical Characteristics rzj Q ht TKvz al mA V(CL)R 11 allRSM > Typ a id Q Max. 1 Part Number VZ ±r 10% V Z- and Suppressor Diodes PVmax = 6 W, P(BR)S = 1000 W, tp = 100 (xs, 10% BZW03/D6V8


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    PDF BZW03/D6V8 BZW03/D7V5 BZW03/D8V2 BZW03/D9V1 BZW03/D10 BZW03/D11 BZW03/D12 BZW03/D13 BZW03/D15 BZW03/D16 BZW03 D3639 bzwo3

    BY236

    Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
    Text: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )


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    IC 7447

    Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
    Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222


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    BZP630-C12

    Abstract: BZP630-C8V2 C9VI BZP630C7V5 BZP630-D8V2 BZP630-C20 BZP630-C10 BZP630C15 BZP630-C16 d8v2
    Text: 2T-74/2 STABILISTORY BZP630-C, BZP630-D SWW 1156-141 D iody k rzem ow e Z en era stab ilisto ry p la n a rn e m a le j m o cy w obudow ie m eta lo w ej p rzeznaczone do p racy w u k la d a ch sta b iliz u jq cy ch n ap i^cie oraz w u k lad ach o g ra n icz a j^ cy ch .


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    PDF BZP630-C, BZP630-D BZP630-C BZP630-D Uz-10Â BZPS30-D BZP630-C BZP630-C12 BZP630-C8V2 C9VI BZP630C7V5 BZP630-D8V2 BZP630-C20 BZP630-C10 BZP630C15 BZP630-C16 d8v2

    BZP611C12

    Abstract: BZP611 BZP611-C BZP611-D4V7 BZP611-D6V8 BZP611-D1 BZP611-C3V6 BZP611-C10 BZP611-C5V1 zenera
    Text: 25- 74/2 STABILISTORY BZP611-C, BZP611-D SWW 1156-141 Diody krzem ow e stabilistory stopowe m alej mocy, w obudow ie szklanej przeznaczone do pracy w u k ladach stabilizujqcych oraz w ukladach ograniczaj^cych napi^cie. Stabilistory BZP611-C m ate to lerancj? napi^cia stabilizacji U z ' t & k


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    PDF BZP611-C, BZP611-D BZP611-C BZP611-D 1-C20 BZP611-C3V9 BZP611-C22 BZP611-C4V3 BZP611-C24 BZP611-C4V7 BZP611C12 BZP611 BZP611-D4V7 BZP611-D6V8 BZP611-D1 BZP611-C3V6 BZP611-C10 BZP611-C5V1 zenera

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367