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    Text: PowerMOS transistor_BIJZ50C N AUER PHILIPS/DISCRETE QbE D • bbS3T31 0014S7D 1 ■ T - 3 V U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BIJZ50C bbS3T31 0014S7D BUZ50C_ DD14S7S T-39-11 PDF