transistor 17609
Abstract: No abstract text available
Text: G E SO LI D 3 Ô 7 5 08 1 STATE G E S O L I D ST AT E QÏ E~ 3fl7SDfll DD17t,Dfl □ 0 1E 17608" " D T • Si - I S' _ Pro Electron Power Transistors File N um ber 1172 Silicon N-P-N Switching Transistor BUX21 TERM INAL DESIGNATIONS For Switching Applications in
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DD17t
BUX21
TQ-204AA
3A750A1
DD17blE
3036IRI
transistor 17609
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Am29854
Abstract: am29853
Text: 'ADVANCED MICRO DEVICES b4 []E57S2S DD17t,D4 64C .17604 Am29833-34/Am29853-54 Ö 2 5 7 5 2 5 ADVANCED.MICRO D E V I C E S D T - ^ S 'Z l Am29833-34/Am29853-54 Parity Bus, Transceivers PRELIMINARY DISTINCTIVE CHARACTERISTICS High-speed bidirectional bus transceiver for processor
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E57S2S
DD17bD4
I7604_
Am29833-34/Am29853-54
200mV
Am29833/34/53/54
WF001360
WF001350
00370B
0017bl3
Am29854
am29853
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ta7781
Abstract: F16GA2-P TA7781P XCS TE 3D16A TA7781F sumida ift coil
Text: MAILILIUMMilUVJUiiJJÜMUÜliLnM TOSHIBA-, ELECTRONIC GS PE^| TDcì7a47 DD17tlb b 1.5V FM/AM IF SYSTEM f Unit in mm Including Earphone Driver TA7781P 16 The TA7781P/F are EM/AM IF system XCs designed for low voltage operation(l.5V), which are especially suitable
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DD17tlb
TA7781P/F
TA7781F
TA7781P
QQ17bES
ta7781
F16GA2-P
TA7781P
XCS TE
3D16A
TA7781F
sumida ift coil
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BFG90A
Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136
Text: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.
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QQ17t73i
BFG51
OT-103)
BFG90A.
7Z94139
bh53131
0Q17b77
BFG90A
BFG51
Q017b
BFG90
SOT-103
SOT103
transistor BT 136
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MSM5117180-70
Abstract: MSM5117180-80
Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.
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MSM5117180
576-Word
18-Bit
MSM5117180
cycles/32ms
MSM5117180-70
MSM5117180-80
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GES2218
Abstract: GES2218A GES2219 GES2219A GHS2218
Text: G E SOLI» STATE DÏ DÊj| 3ä7SDfll 0017TbD 3 3875081 G Ë SOLID STATE uit uyeu r - j r - li Signal Transistors- GES2218A, 19A, GES2218,19
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GES2218A,
GES2218
GHS2218,
GES2218A
GES2219
GES2219A
150mA,
500mA,
GES2219A
GHS2218
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Untitled
Abstract: No abstract text available
Text: u v m L T C 1 5 3 8 -A U X / L T C 1539 . TECHNOLOGY D ual High Efficiency, Low Noise, Synchronous Step-Down S w itching R eg ulators F€ATUft€S D C S C R IP T IO n • M aintains Constant Frequency at Lo w Output Currents ■ Dual N-Channel M O S F E T Synchronous Drive
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Untitled
Abstract: No abstract text available
Text: Thal H e w lett WilEM P A C K A R D - Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 F eatures • Low N oise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz
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AT-41435
AT-41435
Rn/50
44475A4
DD17t
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TC9312N
Abstract: GE DC 300 ADJUSTABLE SPEED DRIVE FK60 TA7780BN
Text: TOSHIBA-, 9097247 TOSHIBA. E L E C T R O N I C 05 i>Ë| ciOci7 2 W 7 D D 1 7 bül 4 | ~ ELECTRONIC 02E 17 6 01 TA7780BN MECHANISM DRIVER FOR IC LOGIC CONTROL Unit in mm The TA7780BN is a mechanism driver IC designed for XC logic control, which is especially suitable for
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TA7780BN
TA7780BN
TC9312N
TC9312N
GE DC 300 ADJUSTABLE SPEED DRIVE
FK60
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Untitled
Abstract: No abstract text available
Text: Optical disc ICs 4-channel PWM driver for CD and MD players BH6510FS The BH6S10FS is a 4-channel PWM driver for CD and MD player motors and actuators. The power M OSFET in the output stage assures low power consumption for applications. •A pplications CD and MD players
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BH6510FS
BH6S10FS
32-pin
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b?E D m 7 T b 4 m 2 D017bMfl 7^5 KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 7 ,2 0 ,2 5 ,30ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.)
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D017bMfl
KM641001
KM641001P/J-17
KM641001P/J-20
150mA
KM641001P/J-25
130mA
KM641001P/J-30
110mA
KM641001P:
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Untitled
Abstract: No abstract text available
Text: DS1689/D S1693 DS1 6 8 9 /DS1 6 9 3 3 Volt/5 Volt Serialized Real Time Clock with NV RAM Control DALLAS SEMICONDUCTOR FEATURES PIN ASSIGNMENT Incorporates industry standard DS1287 PC clock plus enhanced features: • +3 or +5 volt operation • 64-bit Silicon serial number
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DS1689/D
S1693
DS1287
64-bit
DS1689
28-PIN
2bmi30
DST689/D
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2454D
Abstract: 2DQ11 2M54G
Text: O K I Semiconductor MSM5117180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.
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MSM5117180
576-Word
18-Bit
MSM5117180
cycles/32ms
2454D
2DQ11
2M54G
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Untitled
Abstract: No abstract text available
Text: Optical disc ICs 4-channel PWM driver for CD and MD players BH6511FS The BH6511FS is an IC designed for CD and MD player motors and actuators, and has an internal 4-channel PWM driver, and a charge pump circuit that supplies the gate drive for the output stage power MOSFET. The power MOSFET In the output stage assures low power consumption for applications.
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BH6511FS
BH6511FS
32-pin
17TBb
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JRC GPS 112
Abstract: jrc 082 ELLS 110 intel embedded microcontroller handbook JRC GPS SAB 8259 16C550 82077AA FDC37B72X NS16C550
Text: FDC37B72X S i l i c e STANDARD MICROSYSTEMS CORPORATION 128 Pin Enhanced Super I/O With ACPI Support FEATURES 5V Operation PC98, PC99 Compliant Battery Back-up for Wake-Events ISA Plug-and-Play Compatible Register Set - 12 IRQ Options - 15 Serial IRQ Options
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FDC37B72X
FDC37B72X
JRC GPS 112
jrc 082
ELLS 110
intel embedded microcontroller handbook
JRC GPS
SAB 8259
16C550
82077AA
NS16C550
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Untitled
Abstract: No abstract text available
Text: WhoI H E W L E T T wLUM P A C K A R D ATM M ultim ode Fiber T V ii n w i 'P i v P i 'G for SONET OC-3/SDH STM-1 in Low C ost 1x9 Package Style Technical Data Features • Full Compliance w ith ATM Forum UNI SONET OC-3 M ultimode Fiber Physical Layer Specification
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ps/194
HFBR-5205
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Untitled
Abstract: No abstract text available
Text: ,tJINY CXP818P48A CMOS 8-bit Single Chip Microcomputer Description The CXP818P48A is a CMOS 8-bit microcomputer which consists of A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing pattern generation circuit, PWM
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CXP818P48A
CXP818P48A
32kHz
CXP81848A
A3fi23fl3
100PIN
QFP-100P-L01
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5082A CMOS LSI LC321664BJ, BM, BT-70/80 No. 5082A SA\YO 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664BJ, BM, BT is a CMOS dynamic RAM operating on a single 5 V power source and having a
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EN5082A
LC321664BJ,
BT-70/80
40-pin
A031BB
GG17b33.
A021B9
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phase controller L120
Abstract: bitch 28F008SA
Text: SHARP PRODUCT PREVIEW LH28F004SCH-L 4-MBIT 512 KB X 8 SmartVoltage Flash MEMORY SmartVoltage Technology — 2.7V(Read-Only), 3.3V or 5V VCc — 3.3V, 5V or 12V VPP • SRAM-Compatibte Write Interface ■ Hlgh-Density Symmetrically-Blocked Architecture — eight 64-Kbyte Erasable Blocks
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LH28F004SCH-L
40-Lead
44-Lead
48-Lead
64-Kbyte
120ns
150ns
170ns
phase controller L120
bitch
28F008SA
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BUY69A
Abstract: RCA-BUY69 BUY69 BUY69B BUY69C SOLID STATE TRANSISTORS C633H
Text: E SOLID STATE" ~0l 3875081 G E SOLID STATE 5T~|3fl750fll D017faBfi fa J - 01E 17628 D Y -Ï3-C Z Pro Electron Power Transistors File Num ber 1237 BUY69A, BUY69B, BUY69C H ig h V o lta g e S ilic o n N - P - N * P o w e r T ra n s is to rs terminal designations
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BUY69A,
BUY69B,
BUY69C
00-1000V
O-204AA
RCA-BUY69
MCS-31034
DD17b31
BUY69A
BUY69
BUY69B
BUY69C
SOLID STATE TRANSISTORS
C633H
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DD3150
Abstract: No abstract text available
Text: • O N Y I C X P 8 1 9 5 2 / 8 1 9 6 CMOS 8-bit Single Chip Microcomputer Description The CXP81952/81960 is a CMOS 8-bit micro computer which consists of A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing pattern generation
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CXP81952/81960
32kHz
100PIN
CXP81952/81960
QFP-100P-L01
QFP100-P-1420-A
COPPER/42
DD3150
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sgsp365
Abstract: sp365 SGSP465 p466 sgsp466 SGSP464 sgsp564 S 566 b P565 SGSP566
Text: S 6 S-THOHSON 0 7 E ' •• : - , SGSP364/P365/P366 SGSP464/P465/P466 ; . SG SP 56 4 /P 56 5 /P 5 6 6 73C D | 17395 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V ds •d l m • Ptot Tstg Tj (•) Pulse w idth lim ited b y safe operating area
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SGSP364/P365/P366
SGSP464/P465/P466
50V/400V
SGSP366
SP364
SP365
SP464
SP465
SP564
SP565
sgsp365
SGSP465
p466
sgsp466
SGSP464
sgsp564
S 566 b
P565
SGSP566
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20-PIN
Abstract: 26-PIN ZIP20-P-400-W1
Text: O K I Sem iconductor MSM5 14 4 0 0 A/AL 1,048,576-W ord x 4 -B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION c v -siu v iu s silicon gate proce The device operates at a single 5V power supply. Its I/O pins are TTL compatible. FEATURES
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MSM514400A/AL_
576-Word
MSM514400A/AL
cycles/16ms,
cycles/128ms
MSM514400A/AL
20-PIN
26-PIN
ZIP20-P-400-W1
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. FEATURES: • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Devices are capable of withstanding greater than 2001V electrostatic charge.
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IDT70V26S/L
84-pin
25/35/55ns
IDT70V26S
G84-3)
J84-1)
70V26
4A25771
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