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    DF2S12FS Search Results

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    DF2S12FS Price and Stock

    Toshiba America Electronic Components DF2S12FS,L3M

    TVS DIODE 9VWM 18.5VC SOD923
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DF2S12FS,L3M Cut Tape 20,882 1
    • 1 $0.1
    • 10 $0.069
    • 100 $0.1
    • 1000 $0.028
    • 10000 $0.025
    Buy Now
    DF2S12FS,L3M Digi-Reel 20,882 1
    • 1 $0.1
    • 10 $0.069
    • 100 $0.1
    • 1000 $0.028
    • 10000 $0.025
    Buy Now
    DF2S12FS,L3M Reel 20,000 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.021
    Buy Now
    Mouser Electronics DF2S12FS,L3M 26,421
    • 1 $0.1
    • 10 $0.069
    • 100 $0.032
    • 1000 $0.027
    • 10000 $0.021
    Buy Now

    Toshiba America Electronic Components DF2S12FSL3M

    ESD PROTECTION DIODE (STANDARD TYPE, SINGLE) UNIDIRECTIONAL, (SOD-923), VESD: +20KV, IR: 0.05MICROA, - Tape and Reel (Alt: DF2S12FS,L3M)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas DF2S12FSL3M Reel 12 Weeks 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.01836
    Buy Now

    DF2S12FS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DF2S12FS Toshiba Diodes for Protecting against ESD Epitaxial Planar Type Original PDF
    DF2S12FS,L3M Toshiba Semiconductor and Storage Circuit Protection - TVS - Diodes - TVS DIODE 9V 18.5V SOD923 Original PDF

    DF2S12FS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DF2S12FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S12FS Product for Use Only as Protection against Electrostatic Discharge ESD . Unit: mm 0.6±0.05 Characteristic Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150


    Original
    PDF DF2S12FS

    Untitled

    Abstract: No abstract text available
    Text: DF2S12FS TOSHIBA Diodes for Protecting against ESD DF2S12FS Product for Use Only as Protection against Electrostatic Discharge ESD . 0.07M A Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range


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    PDF DF2S12FS

    Untitled

    Abstract: No abstract text available
    Text: DF2S12FS TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type DF2S12FS Diodes for Protecting Against ESD Unit in mm 0.07M A 1.0±0.05 Low total capacitance: CT = 15 pF typ. 0.8±0.05 Zener voltage correspond to E24 series. 0.2 ±0.05 0.1 2terminal ultra small package suitable for mounting on


    Original
    PDF DF2S12FS

    DF2S12FS

    Abstract: Zener 9v
    Text: DF2S12FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S12FS Diodes for Protecting against ESD Unit in mm 0.07M A 1.0±0.05 Low total capacitance: CT = 15 pF typ. 0.8±0.05 Zener voltage corresponds to E24 series. 0.2 ±0.05 0.1 2-terminal ultra small package suitable for mounting on


    Original
    PDF DF2S12FS DF2S12FS Zener 9v

    Untitled

    Abstract: No abstract text available
    Text: DF2S12FS ESD Protection Diodes Silicon Epitaxial Planar DF2S12FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.


    Original
    PDF DF2S12FS OD-923 OD-923 DF2S12FS

    Untitled

    Abstract: No abstract text available
    Text: DF2S12FS ESD Protection Diodes Silicon Epitaxial Planar DF2S12FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.


    Original
    PDF DF2S12FS OD-923) IEC61000-4-2)

    1-1L1A

    Abstract: DF2S12FS
    Text: DF2S12FS 東芝ESD保護用ダイオード DF2S12FS ○ ESD 保護用 単位: mm ※本製品はESD保護用ダイオードでありESD保護用以外の用途 定電圧ダイオード用途を含むがこれに限らない には使用はできません。


    Original
    PDF DF2S12FS IEC61000-4-2 1-1L1A DF2S12FS

    Untitled

    Abstract: No abstract text available
    Text: DF2S12FS ESD Protection Diodes Silicon Epitaxial Planar DF2S12FS 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.


    Original
    PDF DF2S12FS OD-923) IEC61000-4-2)

    Untitled

    Abstract: No abstract text available
    Text: DF2S12FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S12FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150


    Original
    PDF DF2S12FS IEC61000-4-2

    DF2S12FS

    Abstract: No abstract text available
    Text: DF2S12FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S12FS Product for Use Only as Protection against Electrostatic Discharge ESD . Unit: mm Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C


    Original
    PDF DF2S12FS DF2S12FS

    DF2S12FS

    Abstract: toshiba diodes 1-1l1a
    Text: DF2S12FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S12FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150


    Original
    PDF DF2S12FS IEC61000-4-2 DF2S12FS toshiba diodes 1-1l1a

    Untitled

    Abstract: No abstract text available
    Text: DF2S12FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S12FS Product for Use Only as Protection against Electrostatic Discharge ESD . Unit: mm Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C


    Original
    PDF DF2S12FS

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


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    PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


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    PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B

    DF2S6.8FS

    Abstract: DF6A6.8FU DF3A8.2FU DF2S12FS DF2S12FU DF2S16FS SC-81 DF3A3.3FE esm 231 DF2S5.6FS
    Text: 新製品ガイド 2004-9 東芝半導体 新製品ガイド ESD 保護用ダイオード semiconductor 2004 http://www.semicon.toshiba.co.jp/ ESD保護用ダイオード ESD保護用ダイオードとは! インターフェイスなどから侵入する静電気(ESD)を吸収し


    Original
    PDF IEC61000-4-2( DF2S12FU OT-363) SC-88) BEJ0036A 06354C1AE DF2S6.8FS DF6A6.8FU DF3A8.2FU DF2S12FS DF2S12FU DF2S16FS SC-81 DF3A3.3FE esm 231 DF2S5.6FS

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original
    PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original
    PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B

    DF2S3.6SC

    Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
    Text: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original
    PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS

    smd diode Lz zener

    Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original
    PDF SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B