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    Advanced Photonix PDI-M301

    SENSOR PHOTODIODE 900NM TO5
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    ZAMEL DIM-30

    Dimmer; 230VAC; IP20; -20÷45°C; 500W; Leads: screw terminals
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    TME DIM-30 1
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    DIM30 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DIM300WHS12-A000 Linear Integrated Systems Half Bridge IGBT Module Original PDF
    DIM300WHS12-E000 Linear Integrated Systems Half Bridge IGBT Module Original PDF
    DIM300WHS17-A000 Linear Integrated Systems Half Bridge IGBT Module Original PDF
    DIM300XCM45-F000 Dynex IGBT Chopper Module Provisional Original PDF

    DIM30 Datasheets Context Search

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    DIM300WHS12-A000

    Abstract: No abstract text available
    Text: DIM300WHS12-A000 DIM300WHS12-A000 Half Bridge IGBT Module Replaces January 2004 version, issue PDS5691-1.4 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate PDS5691-2.0 February 2004 KEY PARAMETERS VCES


    Original     		PDF DIM300WHS12-A000 PDS5691-1 PDS5691-2 DIM300WHS12-A000

    dynex igbt 1200v

    Abstract: DIM300WHS12A000
    Text: DIM300WHS12-A000 DIM300WHS12-A000 Half Bridge IGBT Module PDS5691-1.4 January 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 300A


    Original     		PDF DIM300WHS12-A000 PDS5691-1 DIM300WHS12-A000 dynex igbt 1200v DIM300WHS12A000

    DIM300XCM45-F000

    Abstract: No abstract text available
    Text: DIM300XCM45-F000 IGBT Chopper Module DS5918- 1.3 February 2009 LN26586 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9V 300A


    Original     		PDF DIM300XCM45-F000 DS5918- LN26586) DIM300XCM45-F000

    DIM300BSS17-E000

    Abstract: No abstract text available
    Text: DIM300BSS17-E000 DIM300BSS17-E000 Half Bridge IGBT Module PDS5720-1.2 February 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM300BSS17-E000 PDS5720-1 DIM300BSS17-E000

    DIM300XCM45-F000

    Abstract: AAAD LN25740
    Text: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.1 November 2007 LN25740 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A


    Original     		PDF DIM300XCM45-F000 DS5918 LN25740) DIM300XCM45-F000 AAAD LN25740

    DIM300WHS17-E

    Abstract: DIM300WHS17-E000 PDS5680-2
    Text: DIM300WHS17-E000 DIM300WHS17-E000 Half Bridge IGBT Module Replaces November 2003, version PDS5680-1.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5680-2.1 December 2003


    Original     		PDF DIM300WHS17-E000 PDS5680-1 PDS5680-2 DIM300WHS17-E000 DIM300WHS17-E

    Untitled

    Abstract: No abstract text available
    Text: DIM300WHS12-H000 DIM300WHS12-H000 Fast Half Bridge IGBT Module Target Infomation DS5626-1.3 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate KEY PARAMETERS VCES


    Original     		PDF DIM300WHS12-H000 DS5626-1 20kHz DIM300WHS12-H000

    Untitled

    Abstract: No abstract text available
    Text: DIM300BSS12-E000 DIM300BSS12-E000 Single Switch IGBT Module PDS5703-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM300BSS12-E000 PDS5703-1 DIM300BSS12-E000

    DIM300XCM45-F000

    Abstract: 8888a
    Text: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.2 December 2007 LN25834 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A


    Original     		PDF DIM300XCM45-F000 DS5918 LN25834) DIM300XCM45-F000 8888a

    DIM300WHS12-A000

    Abstract: No abstract text available
    Text: DIM300WHS12-A000 DIM300WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue PDS5691-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5691-3.0 June 2004 KEY PARAMETERS VCES typ


    Original     		PDF DIM300WHS12-A000 PDS5691-2 DS5691-3 DIM300WHS12-A000

    FDS5694-1

    Abstract: DIM300WHS17-A000 1685 transistor
    Text: DIM300WHS17-A000 DIM300WHS17-A000 Half Bridge IGBT Module FDS5694-1.2 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V


    Original     		PDF DIM300WHS17-A000 FDS5694-1 DIM300WHS17-A000 1685 transistor

    ic lm 4704

    Abstract: 1.2397 DIM300WHS12-E000
    Text: DIM300WHS12-E000 DIM300WHS12-E000 Half Bridge IGBT Module PDS5685-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM300WHS12-E000 PDS5685-1 DIM300WHS12-E000 ic lm 4704 1.2397

    DIM300BSS12-E000

    Abstract: No abstract text available
    Text: DIM300BSS12-E000 DIM300BSS12-E000 Single Switch IGBT Module PDS5703-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM300BSS12-E000 PDS5703-1 DIM300BSS12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM300WHS12-E000 DIM300WHS12-E000 Half Bridge IGBT Module PDS5685-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM300WHS12-E000 PDS5685-1 DIM300WHS12-E000

    600w channel audio amp

    Abstract: O1602A class d audio amplifier 2kW OPA1604 DIM30 O-1602 OPA1602 600W Audio Amplifier
    Text: OPA1602 OPA1604 Burr-Brown Audio SBOS474B – APRIL 2011 – REVISED NOVEMBER 2011 www.ti.com High-Performance, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1602, OPA1604 FEATURES DESCRIPTION • • • • • • • • The OPA1602


    Original     		PDF OPA1602 OPA1604 SBOS474B OPA1602, 35MHz 120dB OPA1604 600w channel audio amp O1602A class d audio amplifier 2kW DIM30 O-1602 600W Audio Amplifier

    300w audio amp schematic

    Abstract: No abstract text available
    Text: OP A1 641 OP A1 OPA1641 OPA1642 OPA1644 642 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484A – DECEMBER 2009 – REVISED APRIL 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION


    Original     		PDF OPA1641 OPA1642 OPA1644 SBOS484A OPA1641, OPA1642, OPA1641 OPA1642 300w audio amp schematic

    300w audio amp schematic circuit

    Abstract: No abstract text available
    Text: OP A1 641 OP A1 642 OPA1641 OPA1642 OPA1644 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484B – DECEMBER 2009 – REVISED AUGUST 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION


    Original     		PDF OPA1641 OPA1642 OPA1644 SBOS484B OPA1641, OPA1642, OPA1641 OPA1642 300w audio amp schematic circuit

    Untitled

    Abstract: No abstract text available
    Text: OP A1 641 OP A1 642 OPA1641 OPA1642 OPA1644 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484B – DECEMBER 2009 – REVISED AUGUST 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION


    Original     		PDF OPA1641 OPA1642 OPA1644 SBOS484B OPA1641, OPA1642, OPA1641 OPA1642

    SBOS484

    Abstract: zener diode 100w
    Text: OP A1 641 OP A1 OPA1641 OPA1642 OPA1644 642 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484A – DECEMBER 2009 – REVISED APRIL 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION


    Original     		PDF OPA1641 OPA1642 OPA1644 SBOS484A OPA1641, OPA1642, OPA1641 OPA1642 SBOS484 zener diode 100w

    Untitled

    Abstract: No abstract text available
    Text: OP A1 641 OP A1 642 OPA1641 OPA1642 OPA1644 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484B – DECEMBER 2009 – REVISED AUGUST 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION


    Original     		PDF OPA1641 OPA1642 OPA1644 SBOS484B OPA1641, OPA1642, OPA1641 OPA1642

    Untitled

    Abstract: No abstract text available
    Text: OP A1 641 OP A1 OPA1641 OPA1642 OPA1644 642 OP A1 64 4 Burr-Brown Audio www.ti.com SBOS484A – DECEMBER 2009 – REVISED APRIL 2010 High-Performance, JFET-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1641, OPA1642, OPA1644 FEATURES DESCRIPTION


    Original     		PDF OPA1641 OPA1642 OPA1644 SBOS484A OPA1641, OPA1642, OPA1641 OPA1642

    Untitled

    Abstract: No abstract text available
    Text: OPA1602 OPA1604 Burr-Brown Audio SBOS474B – APRIL 2011 – REVISED NOVEMBER 2011 www.ti.com High-Performance, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1602, OPA1604 FEATURES DESCRIPTION • • • • • • • • The OPA1602


    Original     		PDF OPA1602 OPA1604 SBOS474B OPA1602, 35MHz 120dB OPA1604

    Untitled

    Abstract: No abstract text available
    Text: OPA1602 OPA1604 Burr-Brown Audio SBOS474A – APRIL 2011 – REVISED JUNE 2011 www.ti.com High-Performance, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS Check for Samples: OPA1602, OPA1604 FEATURES DESCRIPTION • • • • • • • • The OPA1602


    Original     		PDF OPA1602 OPA1604 SBOS474A OPA1602, 35MHz 120dB OPA1604

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes