Untitled
Abstract: No abstract text available
Text: Ordering number:EN3611A SB05W05C Schottky Barrier Diode Twin Type • Cathode Common 50V, 500mA Rectifier Applications Package Dimensions · Universal-use rectifier. · High frequency rectification (switching regulators, converters, choppers). unit:mm 1169A
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EN3611A
SB05W05C
500mA
SB05W05C]
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SB05W05C
Abstract: No abstract text available
Text: Ordering number:EN3611A SB05W05C Schottky Barrier Diode Twin Type • Cathode Common 50V, 500mA Rectifier Applications Package Dimensions · Universal-use rectifier. · High frequency rectification (switching regulators, converters, choppers). unit:mm 1169A
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EN3611A
SB05W05C
500mA
SB05W05C]
SB05W05C
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3611B SB05W05C Schottky Barrier Diode http://onsemi.com 50V, 0.5A, Low IR, Monolithic Dual CP Common Cathode Applications • • Universal-use rectifier High frequency rectification switching regulators, converters, choppers Features
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EN3611B
SB05W05C
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36113
Abstract: No abstract text available
Text: SB05W05C Ordering number : EN3611B SANYO Semiconductors DATA SHEET SB05W05C Schottky Barrier Diode Twin Type • Cathode Common 50V, 500mA Rectifier Applications • • Universal-use rectifier High frequency rectification (switching regulators, converters, choppers)
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EN3611B
SB05W05C
500mA
36113
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Untitled
Abstract: No abstract text available
Text: SB05W05C Ordering number : EN3611B SANYO Semiconductors DATA SHEET SB05W05C Schottky Barrier Diode Twin Type • Cathode Common 50V, 500mA Rectifier Applications • • Universal-use rectifier High frequency rectification (switching regulators, converters, choppers)
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SB05W05C
EN3611B
500mA
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motor IG 2200 19 X 000 15 R
Abstract: motor IG 2200 53 X 000 41 R ic c 838 IRG4BC20KD IRG4BC20KD-S AN-994 IRGBC20KD2-S IRGBC20MD2-S motor IG 2200 19 00001 227V
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
motor IG 2200 19 X 000 15 R
motor IG 2200 53 X 000 41 R
ic c 838
IRG4BC20KD
IRG4BC20KD-S
AN-994
IRGBC20KD2-S
IRGBC20MD2-S
motor IG 2200 19 00001
227V
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IRG4IBC20KD
Abstract: No abstract text available
Text: PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V
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-91689A
IRG4IBC20KD
25kHz
O-220
IRG4IBC20KD
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AN-994
Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91598A
IRG4BC20KD-S
AN-994
IRG4BC20KD-S
IRGBC20KD2-S
IRGBC20MD2-S
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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91453B
IRG4BC30UD
O-220AB
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IRG4IBC30UD
Abstract: PD917
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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PD91753A
IRG4IBC30UD
O-220
IRG4IBC30UD
PD917
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PDF
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IRG4BC20FD
Abstract: No abstract text available
Text: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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1601A
IRG4BC20FD
O-220AB
optimiz52-7105
IRG4BC20FD
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PDF
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IRG4IBC20KD
Abstract: transistor VCE 1000V
Text: PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V
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-91689A
IRG4IBC20KD
25kHz
O-220
IGB2-7105
IRG4IBC20KD
transistor VCE 1000V
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IRG4BC30UD
Abstract: ir*c30ud
Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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91453B
IRG4BC30UD
O-220AB
IRG4BC30UD
ir*c30ud
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PDF
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Untitled
Abstract: No abstract text available
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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PD91753A
IRG4IBC30UD
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -91750A IRG4IBC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Very Low 1.66V votage drop 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating
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-91750A
IRG4IBC20FD
O-220
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IRG4BC20UD
Abstract: No abstract text available
Text: PD 91449B IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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91449B
IRG4BC20UD
O-220AB
opt52-7105
IRG4BC20UD
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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-91783A
IRG4BC20FD-S
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PDF
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IRG4BC20FD
Abstract: No abstract text available
Text: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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1601A
IRG4BC20FD
O-220AB
optimiz20
IRG4BC20FD
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PDF
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RU diode
Abstract: IRG4BC30KD IRG4IBC30KD
Text: PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V
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-91690A
IRG4IBC30KD
25kHz
O-220
RU diode
IRG4BC30KD
IRG4IBC30KD
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IRG4PC40KD
Abstract: irg4pc
Text: PD -91584A IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91584A
IRG4PC40KD
O-247AC
IRG4PC40KD
irg4pc
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -91584A IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
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-91584A
IRG4PC40KD
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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1573A
IRG4PH50UD
O-247AC
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AN-994
Abstract: IRG4BC20FD-S
Text: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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-91783A
IRG4BC20FD-S
optimize52-7105
AN-994
IRG4BC20FD-S
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PDF
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SB05W05C
Abstract: 361-12
Text: Ordering number;EN3611A SB05W05C N0.3611A Schottky Barrier Diode Twin Type • Cathode Common SA%YO i 50V, 500mA Rectifier A pplications • Universal-use rectifier • High frequency rectification (switching regulators, converters, choppers) F e a tu re s
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OCR Scan
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EN3611A
SB05W05C
500mA
SB05W05C
361-12
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