IRG4IBC30UD
Abstract: PD917
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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PD91753A
IRG4IBC30UD
O-220
IRG4IBC30UD
PD917
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PDF
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Untitled
Abstract: No abstract text available
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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PD91753A
IRG4IBC30UD
O-220
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IGBT IRG4IBC30UD
Abstract: IRG4IBC30UD IGBT collector voltage 5kV ir*c30ud PD917
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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PD91753A
IRG4IBC30UD
O-220
Absol20
IGBT IRG4IBC30UD
IRG4IBC30UD
IGBT collector voltage 5kV
ir*c30ud
PD917
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IRG4IBC30UD
Abstract: No abstract text available
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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Original
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PD91753A
IRG4IBC30UD
O-220
Absol52-7105
IRG4IBC30UD
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Untitled
Abstract: No abstract text available
Text: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC
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PD-91797
HFA40HF120C
370nC
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Untitled
Abstract: No abstract text available
Text: PD-91796 PRELIMINARY TM HEXFRED HFA40HF60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 1.56V Qrr = 270nC
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PD-91796
HFA40HF60C
270nC
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MAX1636
Abstract: IRF7805 IRF7807 MAX5480 schematic diagram 200v dc voltage regulator
Text: PD-91748 IRNBPS1 TM Mobile Pentium II Power Supply Evaluation Board 90% Peak Efficiency Achieved The new IRNBPS1 evaluation board offers the power supply designer a convenient way to evaluate power MOSFET performance in DC/DC converters powering next-generation mobile processors. A synchronous
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PD-91748
IRF7805
IRF7807
IRF7805
MAX1636
MAX5480
schematic diagram 200v dc voltage regulator
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MOSFET Device Effects on Phase Node Ringing
Abstract: 300khz mosfet driver IC IRF7805
Text: A Solution to Simplify 60A Multiphase Designs By John Lambert & Chris Bull, International Rectifier, USA As presented at PCIM 2001 Today’s servers and high-end desktop computer CPUs require peak currents of around 60A-80A and next generation processors will be in the order of 100A. Similarly, the transient response in today’s CPUs is in the
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0A-80A
00A/us.
iP2001
IRF7805
PD-91746C,
MOSFET Device Effects on Phase Node Ringing
300khz mosfet driver IC
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IRHM7250SE
Abstract: No abstract text available
Text: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 200Volt, 0.10W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation
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PD-91779
IRHM7250SE
200Volt,
Rectifi10)
IRHM7250SE
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300C
Abstract: IRG4CH40SB IRG4PH40S
Text: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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PD-91799A
IRG4CH40SB
IRG4CH40SB
IRG4PH40S
300C
IRG4PH40S
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Untitled
Abstract: No abstract text available
Text: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω
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PD-91781C
IRHQ6110
LCC-28)
IRHQ63110
LCC-28
MIL-STD-750,
80volt
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Untitled
Abstract: No abstract text available
Text: PD-91787I IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/683 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) RDS(on) ID 0.0035Ω 75A*
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PD-91787I
IRHNA57Z60
JANSR2N7467U2
MIL-PRF-19500/683
IRHNA57Z60
IRHNA53Z60
IRHNA54Z60
IRHNA58Z60
1000K
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IRHNA53Z60
Abstract: IRHNA54Z60 IRHNA57Z60 JANSF2N7467U2 JANSG2N7467U2 JANSR2N7467U2
Text: PD-91787I IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/683 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) RDS(on) ID 0.0035Ω 75A*
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PD-91787I
IRHNA57Z60
JANSR2N7467U2
MIL-PRF-19500/683
IRHNA57Z60
IRHNA53Z60
JANSF2N7467U2
IRHNA54Z60
JANSG2N7467U2
IRHNA54Z60
JANSF2N7467U2
JANSG2N7467U2
JANSR2N7467U2
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dc-dc driver schematic DIP ic
Abstract: IRF7805
Text: A Whole New Way to Design On-Board Single-Phase Synchronous Buck Converters for Hi-End Network Systems By Carl Smith, International Rectifier, El Segundo, CA As presented at Powersystems World 2001 Abstract Power levels and power density requirements continue to increase for many types of end
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iP1001
21Vin,
925Vout
IRF7805
PD91746C,
dc-dc driver schematic DIP ic
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Untitled
Abstract: No abstract text available
Text: PD-91796A HFA40HF60C Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount VF = 1.56V Qrr = 270nC di rec M/dt = 345A/µs Description
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PD-91796A
HFA40HF60C
270nC
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pcb 200W audio amplifier
Abstract: IRHNB7264SE
Text: PD-91738 IRHNB7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 250Volt, 0.11W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No
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Original
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PD-91738
IRHNB7264SE
250Volt,
pcb 200W audio amplifier
IRHNB7264SE
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω
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Original
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PD-91781C
IRHQ6110
LCC-28)
IRHQ63110
80volt
MlL-STD-750,
-100V,
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PDF
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HFA40HF120C
Abstract: No abstract text available
Text: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC
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Original
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PD-91797
HFA40HF120C
370nC
HFA40HF120C
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PDF
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HFA40HF60C
Abstract: No abstract text available
Text: PD-91796 PRELIMINARY TM HEXFRED HFA40HF60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 1.56V Qrr = 270nC
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Original
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PD-91796
HFA40HF60C
270nC
HFA40HF60C
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2 SK 0243
Abstract: 300C IRG4CH40SB IRG4PH40S
Text: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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Original
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PD-91799A
IRG4CH40SB
IRG4CH40SB
IRG4PH40S
2 SK 0243
300C
IRG4PH40S
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PDF
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2 SK 0243
Abstract: No abstract text available
Text: PD-91799A International IQR Rectifier IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) (on) C ollector-to-Em itter Saturation Voltage 4.5V Max.
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OCR Scan
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IRG4CH40SB
PD-91799A
IRG4CH40SB
IRG4PH40S
2 SK 0243
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PDF
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier PD-91797 PRELIMINARY HEXFRED1 Ultrafast, Soft Recovery Diode Features • • • • • HFA40HF120C V R = 1200V IS O LA T E D BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic
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OCR Scan
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PD-91797
HFA40HF120C
370nC
80A/ps
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PDF
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier PD-91796 PRELIMINARY HEXFRED HFA40HF60C Ultrafast, Soft Recovery Diode Features • • • • • V r = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount V F = 1.56V
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OCR Scan
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PD-91796
HFA40HF60C
270nC
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PDF
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier PD-91791 IRG4IBC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features c • D esig n ed expre ss ly for S w itc h -M o d e P o w er Su pp ly and P F C p o w er factor correction ? applications • 2 .5 k V , 6 0s insulation voltage
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OCR Scan
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PD-91791
IRG4IBC30W
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PDF
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