power supply IRF830 APPLICATION
Abstract: IRL830T IRL830 BAY 45 BAY 61 MOSFET 400V TO-220 IRF830 IRL830S Diode BAY 18 Diode BAY 45
Text: Bay Linear Linear Excellence IRF830 POWER MOSFET Advance Information Description Features The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all
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IRF830
O-220
power supply IRF830 APPLICATION
IRL830T
IRL830
BAY 45
BAY 61
MOSFET 400V TO-220
IRF830
IRL830S
Diode BAY 18
Diode BAY 45
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B2515
Abstract: b2500 ultra FAST DMOS FET Switches B2520 B2520K4
Text: Bay Linear Inspire the Linear Power B2520/B2515 N-CHANNEL DMOS FET SWITCH VIDEO TRANSISTOR Series Description Features The B2520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The
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B2520/B2515
B2520
B2515
120dB
B2520
B2500
B2515
ultra FAST DMOS FET Switches
B2520K4
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ultra FAST DMOS FET Switches
Abstract: 60659 B3520 B3520K4 B3540 B3540K4-XX CT-3520
Text: Bay Linear Inspire the Linear Power B3520/B3540 N-CHANNEL DMOS FET SWITCH High Gain Level Shifter Series Description Features The B3520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency wireless
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B3520/B3540
B3520
CT3520
ultra FAST DMOS FET Switches
60659
B3520K4
B3540
B3540K4-XX
CT-3520
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TCA4401
Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 BAY61
Text: Remote Control Appnote 34 1. Simple Infrared Remote Control with Low Current Consumption gate 1 drops below the minimum H-level threshold and thus the oscillation is interrupted. The time constant of R1C1-circuit is dimensioned for a burst length of 1 ms. The 1 nF capacitor,
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TAA761A
Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Text: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,
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LD261
BPX81.
TAA761A
TDA4050B
BPW32
TAA761
FLH101
TCA335A
tda4050
TCA965 equivalent
tca965
transistor bc238
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WATKINS JOHNSON mixer
Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Text: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single
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schematic diagram inverter 12v to 24v 30a
Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
Text: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the
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2364E
2364F
2364P
2364P-5
schematic diagram inverter 12v to 24v 30a
inverter 5kva circuit diagram
LB1542
2kva inverter circuit diagram
dc to ac inverter schematic diagram
inverter 5kva
digitrip 310 time curve
sim 900A
ac Inverter schematics 10 kw
Allen-Bradley 1336
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HVC376B
Abstract: No abstract text available
Text: HVC376B Variable Capacitance Diode for VCO REJ03G0091-0100Z Previous: ADE-208-687 Rev.1.00 Sep.17.2003 Features • High capacitance ratio (n = 4.3min) and good C-V linearity. • High Q circuit can be composed due to low series resistance. (rs = 0.8 Ω max)
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HVC376B
REJ03G0091-0100Z
ADE-208-687)
HVC376B
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PCS5035
Abstract: No abstract text available
Text: Standard Products PCS5035 Quintet Precision Current Source Radiation Tolerant www.aeroflex.com/power PRELIMINARY February 13, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s
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PCS5035
no-9229
SCD5035
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scsi cable adapter
Abstract: ibm RS/6000 software offline UPS optical disk drive SA38-0569-01 EIA-232 SA38-0569
Text: RS/6000 Enterprise Server Model F80 IBM Installation Guide SA38-0569-01 Second Edition June 2000 Before using this information and the product it supports, read the information in “Safety Notices” on page vii, Appendix B, “Environmental Notices” on page 101, and Appendix C,
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RS/6000
SA38-0569-01
H6DS-9561
09P1324
9P1324
scsi cable adapter
ibm RS/6000 software
offline UPS
optical disk drive
SA38-0569-01
EIA-232
SA38-0569
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2SK3154
Abstract: 2SK3154-E PRSS0004AC-A
Text: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching REJ03G1079-0300 Previous: ADE-208-682A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline
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2SK3154
REJ03G1079-0300
ADE-208-682A)
PRSS0004AC-A
O-220AB)
2SK3154
2SK3154-E
PRSS0004AC-A
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2SK3140
Abstract: 2SK3156 2SK3156-E PRSS0004AC-A
Text: 2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0300 Previous: ADE-208-683A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline
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2SK3156
REJ03G1081-0300
ADE-208-683A)
PRSS0004AC-A
O-220AB)
2SK3140
2SK3140
2SK3156
2SK3156-E
PRSS0004AC-A
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2SK3142
Abstract: 2SK3142-E PRSS0003AE-A
Text: 2SK3142 Silicon N Channel MOS FET High Speed Power Switching REJ03G1071-0300 Previous: ADE-208-681A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline
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2SK3142
REJ03G1071-0300
ADE-208-681A)
PRSS0003AE-A
O-220C
2SK3142
2SK3142-E
PRSS0003AE-A
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2SK3156
Abstract: 2SK3156-E PRSS0004AC-A
Text: 2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0301 Previous: ADE-208-683A Rev.3.01 Apr 27, 2006 Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline
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2SK3156
REJ03G1081-0301
ADE-208-683A)
PRSS0004AC-A
O-220AB)
2SK3156
2SK3156-E
PRSS0004AC-A
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Untitled
Abstract: No abstract text available
Text: Standard Products PCS5035 Quintet Precision Current Sources Built-In Comparators Radiation Tolerant www.aeroflex.com/pcs September 12, 2012 FEATURES ❑ Radiation Performance - Total dose > 100 krad Si , Dose rate = 50 - 300 rads(Si)/s - ELDRS > 15 krads (Si), Dose rate = .01 rads(Si)/s
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PCS5035
Radiation85
SCD5035
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Diode BAY 54
Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
Text: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight
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Diode BAY 54
Abstract: 68W35 telefunken diodes 914 Diode BAY 12 AL6G BAY69 Diode BAY 45 Diode BAY 69 Scans-0014926 marking 69
Text: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T-OZ-0°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110 « / Cathoda \ [| - 11-
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r-03-Ã
Q0GT74?
T-03-09
Ij-100Â
Diode BAY 54
68W35
telefunken diodes 914
Diode BAY 12
AL6G
BAY69
Diode BAY 45
Diode BAY 69
Scans-0014926
marking 69
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BAY 80 diode
Abstract: Diode BAY 54 Diode BAY 55 BAY69 BAY 69 Diode BAY 80
Text: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T - O Z - 0 ° l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110« Cathoda /«<1.6 g<Q55
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Diode BAY 68
Abstract: diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode Diode BAY ODOT747 marking 69
Text: A E G CORP 17E D O D ETM Sb Q Q G TTH S □ • BAY 68 • BAY 69 TfiBLSiPiyiliiKIIKl electronic Creative TechnoSogies T-0Z-Q°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm Cathode Standard glass case 5 4 A 2 DIN 41880
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rLS25Â
T-03-09
ODOT747
Diode BAY 68
diode bay 69
Diode BAY 45
diode I-35 L
aeg diode
bay 68 diode
Diode BAY
marking 69
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Diode BAY 71
Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
CB-127.
Diode BAY 71
Diode BAY 45
Diode BAY 46
Diode BAY 88
BAW21
ESM 3070
1n 4009 diode
BAY67
SFD49
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Diode BAY 61
Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Text: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12
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3AX11/IO
3AX11/IU
11/ilo
3AX11/IÃ
3AX11
BAX11
79/III
79/IV
26/II
Diode BAY 61
Diode BAY 55
Diode BAY 80
BXY 36 DIODE
diode sax 34
bxy26
Diode BAY 68
Diode BAY 23
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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