Vincotech
Abstract: No abstract text available
Text: 10-0B06PPA006RC-L023A09 datasheet Maximum Ratings Inverter Switch Copyright Vincotech 1 16 October 2014 / Revision 1 10-0B06PPA006RC-L023A09 datasheet PFC Switch PFC Diode PFC Switch Protection Diode Rectifier Diode Copyright Vincotech 2 16 October 2014 / Revision 1
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10-0B06PPA006RC-L023A09
Vincotech
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Vincotech
Abstract: No abstract text available
Text: 10-0B06PPA010RC01-L025A19 datasheet Maximum Ratings Inverter Switch Copyright Vincotech 1 16 October 2014 / Revision 1 10-0B06PPA010RC01-L025A19 datasheet PFC Switch PFC Diode PFC Switch Protection Diode Rectifier Diode Copyright Vincotech 2 16 October 2014 / Revision 1
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10-0B06PPA010RC01-L025A19
Vincotech
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Vincotech
Abstract: 10-0B06PPA004RC-L022A09
Text: 10-0B06PPA004RC-L022A09 datasheet Maximum Ratings Inverter Switch Copyright Vincotech 1 14 October 2014 / Revision 1 10-0B06PPA004RC-L022A09 datasheet PFC Switch PFC Diode PFC Switch Protection Diode Rectifier Diode Copyright Vincotech 2 14 October 2014 / Revision 1
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10-0B06PPA004RC-L022A09
Vincotech
10-0B06PPA004RC-L022A09
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Untitled
Abstract: No abstract text available
Text: 10-0B06PPA010RC-L025A09 datasheet Maximum Ratings Inverter Switch Copyright Vincotech 1 14 October 2014 / Revision 1 10-0B06PPA010RC-L025A09 datasheet PFC Switch PFC Diode PFC Switch Protection Diode Rectifier Diode Copyright Vincotech 2 14 October 2014 / Revision 1
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10-0B06PPA010RC-L025A09
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L02ESD5V0D6-5
Abstract: 15KV diode sot363
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE- 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
OT363
L02ESD5V0D6-5
OT363
15KV
diode sot363
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15KV
Abstract: diode sot363
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
OT363
L02ESD5V0D6-5
OT363
100mV
15KV
diode sot363
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BD5 diode
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
L02ESD5V0D6-5
OT363
OT363
100mV
BD5 diode
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT363 The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
L02ESD5V0D6-5
OT363
OT363
100mV
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t056
Abstract: DTLD-101-Lxx Demeter Technologies dfb laser diode cwdm Laser Diode CW 1300nm
Text: 9650 Telstar Ave. • El Monte, CA 91731 Tel: 626-652-7100 • Fax: 626-582-1542 [email protected] www.demeterusa.com 3.125 Gbit 1300 nm CWDM DFB Laser Diode Part No. DTLD101-L00/L01/L02/L03 The DTLD-101-Lxx is a 3.125 Gbit MQW DFB laser diode rt in a T056 package with a flat window cap. This product is
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DTLD101-L00/L01/L02/L03
DTLD-101-Lxx
1300nm
125Gbps
t056
Demeter Technologies
dfb laser diode cwdm
Laser Diode CW 1300nm
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NUR460P
Abstract: No abstract text available
Text: NUR460P Ultrafast power diode 27 August 2012 Product data sheet 1. Product profile 1.1 General description Ultrafast power diode in a SOD141 DO-201AD axial lead plastic package. 1.2 Features and benefits • Axial leaded plastic package • Fast switching
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NUR460P
OD141
DO-201AD)
NUR460P
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NUR460P
Abstract: No abstract text available
Text: NUR460P Ultrafast power diode 3 January 2014 Product data sheet 1. General description Ultrafast power diode in a SOD141 DO-201AD axial lead plastic package. 2. Features and benefits • • • • • • • Axial leaded plastic package Fast switching
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NUR460P
OD141
DO-201AD)
NUR460P
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to
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L02ESD5V0F6-5
OT666
OT563
OT563
100mV
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L02ESD5V0F6-5
Abstract: 15KV
Text: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE- 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The L02ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to
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L02ESD5V0F6-5
OT563
L02ESD5V0F6-5
OT666
15KV
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15KV
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to
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L02ESD5V0F6-5
OT563
OT666
100mV
15KV
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EL02Z
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. EL02Z 1. Scope The present specifications shall apply to an EL02Z . 2. Outline Type Silicon Diode Planar type Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 (Equivalent) 3. Absolute maximum ratings
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EL02Z
UL94V-0
EL02Z
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CMLDM7002AJ
Abstract: 2N7002 CMLDM7002A marking 02J
Text: CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)
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CMLDM7002A
CMLDM7002AJ
OT-563
CMLDM7002AJ
2N7002
200mA,
400mA
CMLDM7002A
marking 02J
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DIODE l02
Abstract: code l02 2n7002 pinout marking 02J sot transistor pinout marking l02
Text: CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)
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CMLDM7002A
CMLDM7002AJ*
CMLDM7002AJ
2N7002
CMLDM7002A:
200mA,
DIODE l02
code l02
2n7002 pinout
marking 02J
sot transistor pinout
marking l02
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DIODE l02
Abstract: dual mosfet "marking code 30" marking l02
Text: CMLDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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CMLDM7002A
2N7002
OT-563
500mA
500mA,
200mA
200mA,
400mA
01-February
DIODE l02
dual mosfet "marking code 30"
marking l02
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plasma cutting
Abstract: DC chopper Fast Recovery Rectifier, 300V M5 12t
Text: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE _ DSR 200B A 50/60 V rrm=500/600V , Ifav=200A , trr=240ns, Softness=0.8 S anR ex Soft Recovery Diode Module DSR200BA is designed for applications requiring fast switching and soft recovery
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DSR200BA50/60
500/600V,
240ns,
DSR200BAis
E76102
E761tK
plasma cutting
DC chopper
Fast Recovery Rectifier, 300V
M5 12t
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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IGBT K 40 T 1202
Abstract: 40 t 1202 igbt BUP306D
Text: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code
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O-218AB
BUP306D
Q67040-A4222-A2
SII003
IGBT K 40 T 1202
40 t 1202 igbt
BUP306D
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PROPS MTE Ô3fl23fl3 Q Q Q E ^ m D B ISONY SLD201 U/V SONY. T -m -osr 20mW High Power Laser Diode Description Package Outline SLD201 U/V is a gain-guided high-power laser diode fabricated by MOCVD. Unit: mm SLD201U Features . Low noise S/ N = 8 0 dB Typ. at 5 mW.
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3fl23fl3
SLD201
SLD201U
L0201U/V
T-41-05
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74LS115
Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Text: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con necting first darlington emitter to output should have series resistor. LS33 5-25
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Untitled
Abstract: No abstract text available
Text: y <>M □ - P X K Super Fast Recovery Diode Twin Diode • O U T L IN E D IM E N S IO N S D20LC40 400V20À ■ fèfèm R A TIN G S A b s o l u t e M a x im u m R a t i n g s m mn s I tem Symbol Operating Junction Temperature -ttA -SljtH EE Maximum Reverse Voltage
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D20LC40
400V20À
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