75307D
Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF75307P3,
HUF75307D3,
HUF75307D3S
43cts
75307D
75307
transistor 75307D
TA75307
AN9321
HUF75307D3
HUF75307D3S
HUF75307D3ST
HUF75307P3
TB334
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PDF
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75332p
Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF75332G3,
HUF75332P3,
HUF75332S3S
75332p
75332S
75332
HUF75332P3
75332G
huf75332
HUF75332G3
HUF75332S3S
HUF75332S3ST
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
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Original
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KSM038AN06A0
KSMI038AN06A0
O-220AB
O-262AB
24e-3
08e-3
28e-2
FDP035AN06A0T
45e-3
65e-2
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75344G3, HUF75344P3, HUF75344S3S Semiconductor Data Sheet March 1999 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF75344G3,
HUF75344P3,
HUF75344S3S
32e-3
52e-2
41e-1
13e-1
83e-2
HUF75344
15e-3
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PDF
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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Original
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FDW2512NZ
FDW2512NZ
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PDF
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IRF530
Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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Original
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IRF530
O-220AB
IRF530
IRF530T
IRF530 fairchild
929e1
980E3
IRF530 mosfet
ON semiconductor N51
IRF530 application
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75329D3, HUF75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75329D3,
HUF75329D3S
57e-2
13e-1
26e-2
HUF75329D
80e-3
00e-2
00e-3
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PDF
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75639p
Abstract: 30E2 75639g
Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor January 1999 53A, 100 V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Num ber 4477.4 Features • 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This
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OCR Scan
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HUF75639G3,
HUF75639P3,
HUF75639S3S
HUF75639
500e-2
35e-1
88e-3
18e-2
75639p
30E2
75639g
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75307P3,
HUF75307D3,
HUF75307D3S
HUF75307
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PDF
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75343P
Abstract: No abstract text available
Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75343G3,
HUF75343P3,
HUF75343S3S
48e-1
23e-1
96e-2
HUF75343
15e-3
50e-2
40e-2
75343P
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75337G3, HUF75337P3, HUF75337S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75337G3,
HUF75337P3,
HUF75337S3S
HUF75337
|
PDF
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Untitled
Abstract: No abstract text available
Text: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75339G3,
HUF75339P3,
HUF75339S3S
98e-1
99e-1
97e-2
HUF75339
00e-3
90e-2
95e-3
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75321D3,
HUF75321D3S
HUF75321D
10e-3
72e-2
67e-2
30e-1
49e-1
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PDF
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76121P
Abstract: No abstract text available
Text: HUF76121P3, HUF76121S3S S em iconductor Data Sheet 47A, 30 V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF76121P3,
HUF76121S3S
HUF76121
76121P
|
PDF
|
|
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Diode LT n5
Abstract: No abstract text available
Text: HUF75309P3, HUF75309D3, HUF75309D3S S em iconductor Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. " This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75309P3,
HUF75309D3,
HUF75309D3S
HUF75309
Diode LT n5
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PDF
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75307D
Abstract: No abstract text available
Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75307P3,
HUF75307D3,
HUF75307D3S
HUF75307
75307D
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PDF
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TL 431 model SPICE
Abstract: Simulation Model tl 431
Text: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75309P3,
HUF75309D3,
HUF75309D3S
HUF75309
TL 431 model SPICE
Simulation Model tl 431
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PDF
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KP120
Abstract: No abstract text available
Text: HUF76132P3, HUF76132S3S S em iconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF76132P3,
HUF76132S3S
51e-2
03e-2
05e-2
81e-1
45e-1
HUF76132
50e-3
18e-2
KP120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75329D3,
HUF75329D3S
13e-1
26e-2
HUF75329D
80e-3
00e-2
00e-3
60e-2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUF75321P3, HUF75321S3S Semiconductor Data Sheet June 1999 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
|
HUF75321P3,
HUF75321S3S
HUF75321P
10e-3
72e-2
67e-2
30e-1
49e-1
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PDF
|
75344G
Abstract: 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST
Text: interrii HUF75344G3, HUF75344P3, HUF75344S3S January 2000 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF75344G3,
HUF75344P3,
HUF75344S3S
75344G
75344P
75344
RELAY TC1
TA75344
HUF75344
HUF75344G3
HUF75344P3
HUF75344S3S
HUF75344S3ST
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PDF
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TSOP-6 .54
Abstract: AN7254 AN7260 ITF87012SVT SC-95 TB370
Text: ITF87012SVT interrii January. m i Data Sheet PRELIMINARY 6A, 20 V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET File Number 4810.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.035i2, VGs = 4.5V Packaging ‘ rDS(ON) = 0.038i2, VGs = 4.0V TSOP-6
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OCR Scan
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ITF87012SVT
00e-3
10e-2
00e-2
00e-1
20e-2
00e-2
TSOP-6 .54
AN7254
AN7260
ITF87012SVT
SC-95
TB370
|
PDF
|
AN7254
Abstract: AN7260 ITF87068SQT TB370 1654.C 50E7
Text: ITF87068SQT interrii F e b ru ary . m i Data Sheet 9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET File Number 4811.1 Features • Ultra Low On-Resistance ‘ r DS ON = 0.015i2, Packaging TSSO P-8 v gs = -4.5V ‘ r DS(ON) = 0.016£2, v qs = -4.0V
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OCR Scan
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ITF87068SQT
AN7254
AN7260
ITF87068SQT
TB370
1654.C
50E7
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PDF
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lambda IC 101
Abstract: AN7254 AN7260 ITF86172SK8T MS-012AA TB370 vj04
Text: ITF86172SK8T interrii January. m i Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET File Number 4809.1 Features • Ultra Low On-Resistance Packaging ‘ rDS ON = 0 .0 1 6£i, v gs = - 1 0 V S 0 8 (JEDEC MS-012AA) ‘ rDS(ON) = 0.023i2, VGS = - 4 .5 V
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OCR Scan
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MS-012AA)
ITF86172SK8T
ITF86172SK8T
MS-012AA
330mm
EIA-481
lambda IC 101
AN7254
AN7260
MS-012AA
TB370
vj04
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PDF
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