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    HUF76121 Price and Stock

    Rochester Electronics LLC HUF76121S3

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121S3 Bulk 634
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    Rochester Electronics LLC HUF76121P3

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121P3 Bulk 701
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    Rochester Electronics LLC HUF76121D3S

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121D3S Bulk 650
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    Rochester Electronics LLC HUF76121S3S

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121S3S Bulk 430
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    Rochester Electronics LLC HUF76121S3ST

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121S3ST Bulk 606
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    HUF76121 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF76121D3 Fairchild Semiconductor 20A, 30V, 0.023 ?, N-Channel, Logic Level UltraF Original PDF
    HUF76121D3 Fairchild Semiconductor 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76121D3 Intersil 20A, 30V, 0.023 ?, N-Channel, Logic Level UltraFET Power MOSFETs Original PDF
    HUF76121D3S Fairchild Semiconductor 20A, 30V, 0.023 ?, N-Channel, Logic Level UltraF Original PDF
    HUF76121D3S Fairchild Semiconductor 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76121D3S Intersil 20A, 30V, 0.023 ?, N-Channel, Logic Level UltraFET Power MOSFETs Original PDF
    HUF76121D3ST Fairchild Semiconductor 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Original PDF
    HUF76121D3ST Fairchild Semiconductor 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76121P3 Fairchild Semiconductor 47 A, 30 V, 0.021 ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76121P3 Intersil 47A, 30V, 0.021 ?, N-Channel, Logic Level UltraFET Power MOSFETs Original PDF
    HUF76121S3S Fairchild Semiconductor 47 A, 30 V, 0.021 ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76121S3S Intersil 47A, 30V, 0.021 ?, N-Channel, Logic Level UltraFET Power MOSFETs Original PDF
    HUF76121S3ST Fairchild Semiconductor 47 A, 30 V, 0.021 ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76121SK8 Fairchild Semiconductor 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76121SK8 Intersil 8A, 30V, 0.023 ?, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76121SK8T Fairchild Semiconductor 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF

    HUF76121 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    76121d

    Abstract: TA76121 transistor 76121D AN7254 AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
    Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121D3, HUF76121D3S 76121d TA76121 transistor 76121D AN7254 AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334 PDF

    76121P

    Abstract: 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121P3, HUF76121S3S 1999ucts 76121P 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 PDF

    76121D

    Abstract: No abstract text available
    Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121D3, HUF76121D3S 76121D PDF

    76121D

    Abstract: AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
    Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121D3, HUF76121D3S O-252AA 330mm EIA-481 76121D AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334 PDF

    76121P

    Abstract: 133E-9
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121P3, HUF76121S3S 76121P 133E-9 PDF

    TB370

    Abstract: AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA
    Text: HUF76121SK8 Data Sheet December 2001 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original
    HUF76121SK8 TB370 AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA PDF

    76121D

    Abstract: HUF76121D3 power Diode 20A/30v transistor 76121D AN7254 AN9321 AN9322 HUF76121D3S HUF76121D3ST TB334
    Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121D3, HUF76121D3S 76121D HUF76121D3 power Diode 20A/30v transistor 76121D AN7254 AN9321 AN9322 HUF76121D3S HUF76121D3ST TB334 PDF

    76121P

    Abstract: 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5
    Text: HUF76121P3, HUF76121S3S Semiconductor Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs [ /Title are manufactured using the HUF76 innovative UltraFET process. 121P3, This advanced process technology


    Original
    HUF76121P3, HUF76121S3S HUF76 121P3, HUF76 121S3S low30V, HUF76121 76121P 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5 PDF

    76121p

    Abstract: No abstract text available
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121P3, HUF76121S3S 2002lopment. 76121p PDF

    76121P

    Abstract: 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121P3, HUF76121S3S 76121P 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original
    HUF76121SK8 PDF

    76121P

    Abstract: 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121P3, HUF76121S3S 76121P 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4 PDF

    76121D

    Abstract: AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
    Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUF76121D3, HUF76121D3S 76121D AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - SPICE and SABER Thermal Impedance Models


    Original
    HUF76121SK8 PDF

    6TPB330M

    Abstract: HUF76121D3S HUF76129D3S HUF76143S3S ISL6431 ISL6431EVAL1 AN9975
    Text: Embedded DC-DC Converters Using the ISL6431 PWM Controller ICs TM Application Note September 2001 AN9975 Introduction Quick Start Evaluation The ISL6431 is a voltage mode controller with many functions that are needed for a multitude of demanding applications. The ISL6431 a contains a high performance


    Original
    ISL6431 AN9975 ISL6431 300kHz 6TPB330M HUF76121D3S HUF76129D3S HUF76143S3S ISL6431EVAL1 AN9975 PDF

    76121S

    Abstract: 76121P TA761
    Text: HUF76121P3, HUF76121S3, HUF76121S3S Semiconductor Data Sheet 49A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF76121P3, HUF76121S3, HUF76121S3S O-263AB HUF76121S3S O-263AB 76121S 76121P TA761 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 Semiconductor April 1999 Data Sheet File Number Features 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level G a te Drive This N -C h a n n e l pow er M O S F E T is • 8A , 3 0 V m anufactured using the innovative


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    HUF76121SK8 MS-012AA 330mm EIA-481 PDF

    Untitled

    Abstract: No abstract text available
    Text: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER


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    HUF76121SK8 100ms. PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30 V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF76121D3, HUF76121D3S O-252AA T0-252AA 330mm PDF

    76121P

    Abstract: 76121S
    Text: in t e la i I HUF76121P3, HUF76121S3S D a ta S h e e t 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channei power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF76121P3, HUF76121S3S HUF76121S3S AN7254 AN7260. 76121P 76121S PDF

    76121D

    Abstract: F76121D3S
    Text: interrii HUF76121D3, HUF76121D3S D a ta S h e e t 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUF76121D3, HUF76121D3S HUF76121D3S AN7260. 76121D F76121D3S PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 S em iconductor Data Sheet April 1999 • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan
    HUF76121SK8 TA76121 MS-012AA PDF

    76121P

    Abstract: No abstract text available
    Text: HUF76121P3, HUF76121S3S S em iconductor Data Sheet 47A, 30 V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF76121P3, HUF76121S3S HUF76121 76121P PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30 V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUF76121D3, HUF76121D3S HUF76121D3S T0-252AA EIA-481 PDF