Untitled
Abstract: No abstract text available
Text: SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 at VGS = 10 V 84b 0.0095 at VGS = 4.5 V 59b VDS (V) 30 D TrenchFETr Power MOSFET D 175 _C Junction Temperature D Optimized for Low-Side Synchronous Rectifier
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SUD50N03-06P
O-252
SUD50N03-06P
08-Apr-05
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SUD50N03-06P
Abstract: No abstract text available
Text: SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 at VGS = 10 V 84b 0.0095 at VGS = 4.5 V 59b VDS (V) 30 D TrenchFETr Power MOSFET D 175 _C Junction Temperature D Optimized for Low-Side Synchronous Rectifier
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SUD50N03-06P
O-252
SUD50N03-06P
25lectual
18-Jul-08
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Si4920DY
Abstract: SI4920DY-T1
Text: Si4920DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.025 at VGS = 10 V "6.9 0.035 at VGS = 4.5 V "5.8 D TrenchFETr Power MOSFETs D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2
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Si4920DY
Drain250
S-52637--Rev.
02-Jan-06
SI4920DY-T1
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SI4920DY
Abstract: No abstract text available
Text: Si4920DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.025 at VGS = 10 V "6.9 0.035 at VGS = 4.5 V "5.8 D TrenchFETr Power MOSFETs D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2
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Si4920DY
08-Apr-05
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Si4966DY
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2
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Si4966DY
08-Apr-05
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SI4920DY
Abstract: No abstract text available
Text: Si4920DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.025 at VGS = 10 V "6.9 0.035 at VGS = 4.5 V "5.8 D TrenchFETr Power MOSFETs D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2
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Si4920DY
18-Jul-08
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283 diode
Abstract: TP0202K
Text: SPICE Device Model TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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TP0202K
S-52635Rev.
02-Jan-06
283 diode
TP0202K
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si4686dy
Abstract: SI4686
Text: SPICE Device Model Si4686DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4686DY
S-52631Rev.
02-Jan-06
SI4686
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SUM55P06-19L
Abstract: No abstract text available
Text: SPICE Device Model SUM55P06-19L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM55P06-19L
S-52635Rev.
02-Jan-06
SUM55P06-19L
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SUB65P06-20
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB65P06-20
S-52635Rev.
02-Jan-06
SUB65P06-20
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Si1499DH
Abstract: SPICE PARAMETER V727
Text: SPICE Device Model Si1499DH Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1499DH
S-52633Rev.
02-Jan-06
SPICE PARAMETER
V727
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SUD19P06-60L
Abstract: No abstract text available
Text: SPICE Device Model SUD19P06-60L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD19P06-60L
S-52635Rev.
02-Jan-06
SUD19P06-60L
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Untitled
Abstract: No abstract text available
Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2
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Si4966DY
18-Jul-08
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SUP90P06-09L
Abstract: No abstract text available
Text: SPICE Device Model SUP90P06-09L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90P06-09L
capacita255
S-52635Rev.
02-Jan-06
SUP90P06-09L
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Untitled
Abstract: No abstract text available
Text: Si7904DN Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 7.7 0.036 at VGS = 2.5 V 7.0 0.045 at VGS = 1.8 V 6.3 • TrenchFET Power MOSFETS: 1.8-V Rated • New Low Thermal Resistance PowerPAK®
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Si7904DN
07-mm
Si7904DN-T1
08-Apr-05
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TP0202K
Abstract: No abstract text available
Text: SPICE Device Model TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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TP0202K
18-Jul-08
TP0202K
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Si1499DH
Abstract: No abstract text available
Text: SPICE Device Model Si1499DH Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1499DH
18-Jul-08
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TP0610K
Abstract: No abstract text available
Text: SPICE Device Model TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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TP0610K
18-Jul-08
TP0610K
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7447ADP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7447ADP
18-Jul-08
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Si4686DY
Abstract: SI4686
Text: SPICE Device Model Si4686DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4686DY
18-Jul-08
SI4686
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Si5479DU
Abstract: No abstract text available
Text: SPICE Device Model Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5479DU
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB65P06-20
18-Jul-08
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SUP90P06-09L
Abstract: No abstract text available
Text: SPICE Device Model SUP90P06-09L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90P06-09L
18-Jul-08
SUP90P06-09L
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SUM110P04-04L
Abstract: No abstract text available
Text: SPICE Device Model SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110P04-04L
18-Jul-08
SUM110P04-04L
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