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    SI4966DY Price and Stock

    Vishay Siliconix SI4966DY-T1-E3

    MOSFET 2N-CH 20V 8SOIC
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    SI4966DY-T1-E3 Digi-Reel 1
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    RS SI4966DY-T1-E3 Bulk 2,500
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    Quest Components SI4966DY-T1-E3 248
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    Vishay Siliconix SI4966DY-T1-GE3

    MOSFET 2N-CH 20V 8SOIC
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    Vishay Intertechnologies SI4966DY

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    Bristol Electronics SI4966DY 1,148
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    Vishay Siliconix SI4966DYT1

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    Bristol Electronics SI4966DYT1 1,126
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    Vishay Siliconix SI4966DY

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    SI4966DY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4966DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4966DY Vishay Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    Si4966DY Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4966DY-T1 Vishay Intertechnology Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4966DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8SOIC Original PDF
    SI4966DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 8SOIC Original PDF

    SI4966DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8


    Original     		PDF Si4966DY Si4966DY-T1 Si4966DY-T1--E3 S-50695--Rev. 18-Apr-05

    Si4966DY

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		PDF Si4966DY Temperature50 S-54939--Rev. 29-Sep-97

    Si4966DY

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		PDF Si4966DY Storag50 S-54939--Rev. 29-Sep-97

    Si4966DY

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2


    Original     		PDF Si4966DY 08-Apr-05

    Si4966DY

    Abstract: No abstract text available
    Text: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET


    Original     		PDF Si4966DY S-54939--Rev. 29-Sep-97

    Si4966DY

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2


    Original     		PDF Si4966DY

    Untitled

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 11-Mar-11

    3771

    Abstract: 8948 AN609 Si4966DY
    Text: Si4966DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4966DY AN609 12-Jan-06 3771 8948

    Si4966DY

    Abstract: Si4966DY-T1-E3
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4966DY 2002/95/EC Si4966DY-T1-E3 Si4966DY-T1-GE3 18-Jul-08

    Si4966DY

    Abstract: No abstract text available
    Text: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET


    Original     		PDF Si4966DY S-54939--Rev. 29-Sep-97

    Untitled

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 at VGS = 4.5 V " 7.1 0.035 at VGS = 2.5 V " 6.0 D TrenchFETr Power MOSFET D 2.5 V Rated D 100 % Rg tested D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2


    Original     		PDF Si4966DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D TrenchFETr Power MOSFET D 2.5-V Rated D Lead (Pb)-Free Version is RoHS Compliant D1 SO-8


    Original     		PDF Si4966DY Si4966DY-T1 Si4966DY-T1--E3 08-Apr-05

    MSM586SEV

    Abstract: SI4966DY U-152 MSM586-SEV
    Text: APPLICATION NOTE 099 5V on ISA BUS is not available From: Dar Product: MSM586SEV / SEN To: Support Version: V2.1 Date: 15.01.2002 BIOS: - Who has issued this problem description: DLAG Support The problem description: The 5V on the ISA BUS are missing. The Application Fix Report:


    Original     		PDF MSM586SEV SI4966DY) J48/PIN2 App\app-099 app-099 SI4966DY U-152 MSM586-SEV

    Untitled

    Abstract: No abstract text available
    Text: 19-2795; Rev 2; 6/07 Low-Cost, Wide Input Range, Step-Down Controllers with Foldback Current Limit The MAX8545/MAX8546/MAX8548 are voltage-mode pulse-width-modulated PWM , step-down DC-DC controllers ideal for a variety of cost-sensitive applications. They drive low-cost n-channel MOSFETs for both the


    Original     		PDF MAX8545/MAX8546/MAX8548

    AD91018

    Abstract: ibm usa 2001 P6 MOTHERBOARD TRANSISTOR A107 Transistor HA17 bjt transistor c243 capacitor E4 2200uF 16V 8061 intel hp 530 motherboard power supply solution hp 530 motherboard circuit and solution C328
    Text: Intel 820 Chipset Design Guide July 2000 Order Number: 290631-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability


    Original     		PDF

    intel 945 motherboard schematic diagram

    Abstract: Tablet PC R116 schematic PC intel 945 MOTHERBOARD schematic intel 945 crb schematic intel chipset 945 motherboard PC intel 945 MOTHERBOARD mosfet used in CIRCUIT atx 400 pnf Intel 855PM Odem ICH4-M temperature controlled fan project using thermister Intel 945 mother board diagram
    Text: R Intel 855PM Chipset Platform Design Guide For use with Intel Pentium M and Intel Celeron M Processors ® ® ® ® May 2004 Revision Number 003 Document Number: 252614-003 R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF 855PM 855PM intel 945 motherboard schematic diagram Tablet PC R116 schematic PC intel 945 MOTHERBOARD schematic intel 945 crb schematic intel chipset 945 motherboard PC intel 945 MOTHERBOARD mosfet used in CIRCUIT atx 400 pnf Intel 855PM Odem ICH4-M temperature controlled fan project using thermister Intel 945 mother board diagram

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    Untitled

    Abstract: No abstract text available
    Text: Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET P R O D U C T SUM M ARY v Ds m Rds«m ) ( ) I d {A) 0.025 @ VGS = 4.5 V ±7.1 0.035 @ VGS = 2.5 V ±6.0 i» -* 20 u D, SO -8 D, U o jl d2 ~5~1 D2 Dg D2 PARAMETER Ô Ô Si S2 N-Channel MOSFET N-Channet MOSFET


    OCR Scan     		PDF S-54939-- 29-Sep-97 Si4966DY