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    Text: 1-1 N AMER PHILIPS/DISCRETE DhE D • bhS3T31 DQ1S247 T ■ RZ2833B30W MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.


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    bhS3T31 DQ1S247 RZ2833B30W PDF