3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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PDF
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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Original
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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PDF
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toshiba toggle mode nand
Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit
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Original
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64M128M
66MHz
100MHz
200MHz)
500/600MHz
800MHz
400MHz
800MHz)
X16/X18X32
PhotoPC550
toshiba toggle mode nand
TC518128
TC518129
TC551001 equivalent
551664
TC518512
sgs-thomson power supply
Toggle DDR NAND flash
jeida 38 norm
APPLE A5 CHIP
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PDF
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256kx8 sram 5v
Abstract: toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb
Text: Toshiba America Electronics Search SRAM - Low Power Asynchronous Press Releases | Select One DRAM Components DRAM Components Archive DRAM Modules DRAM Modules (Archive) Flash - NOR Flash - NAND 5V Flash - NAND 3.3V Flash - SmartMedia Multi-Chip Package SRAM - Low Power
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TC551001C,
128Kx8
TC551001CI,
TC554001A-V
TC554001AI
ismatch/20000921/09112000/TOSH/09112000/1
TC55V200
TC55V2001
TC55V2001I
256kx8 sram 5v
toshiba TSOP
toshiba Nand flash bga
SRAM 512*8
NAND FLASH BGA
256kx8 sram
128kx16
toshiba nand
Toshiba America Electronics
toshiba nand flash 4Mb
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PDF
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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Original
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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PDF
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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Original
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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PDF
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km416c256bj
Abstract: No abstract text available
Text: DRAM MODULE_ / _ 1 Mega Byte KMM532256BW/BWG Fast Page Mode \? 256KX32 DRAM SIMM Using 256Kx16 DRAM, 5V G EN E R A L D ESCRIPTIO N FEATURES • Performance Range: The Samsung KMM532256BW is a 256K bit x 32 Dynamic RAM high density memory module. The
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OCR Scan
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KMM532256BW/BWG
256KX32
256Kx16
KMM532256BW
40-pin
72-pin
km416c256bj
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b?E D • b 1 1 1 5 MT 000^7=57 711 ■ MRN OBSOLETE JUNE 94 D18A 512K X 8, 256K X 16 DRAM DIE M IC R O N B SEMiCONO'JCTOa INC. 512Kx8, 256Kx16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A GENERAL PHYSICAL SPECIFICATIONS • • •
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OCR Scan
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114x114
512Kx8,
256Kx16
MT4C8512D18A
MT4C16257D18A
150mm
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PDF
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HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
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OCR Scan
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HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
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PDF
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64mb edo dram simm
Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt
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OCR Scan
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VQ264260BJ
4265BJ
264265BJ
17400CJ
17405CJ
174TGA
26418165BJGA
26418165BTGA
VE46417805BJGA
64mb edo dram simm
Dram 168 pin EDO 8Mx8
4Mx4 dram simm
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N 1 MT4LG16257 S 256K DRAM DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply*
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OCR Scan
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MT4LG16257
175mW
512-cycle
MT4LC16257)
MT4LC16257S)
MT4LC16257
CYCLE24
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PDF
|
Untitled
Abstract: No abstract text available
Text: M IC R O N • 512K X SEMICONDUCTOR. MC WIDE DRAM 8 MT4C8512/3 WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process
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OCR Scan
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MT4C8512/3
350mW
024-cycle
MT4C8513
28-Pin
256KX
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PDF
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KAH marking
Abstract: ci983
Text: M IC R O N I 11 — ^ MT4C16260/1 256Kx 16 WIDE DRAM WIDE DRAM 256K x 16 DRAM * ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process
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OCR Scan
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4C16260/1
256Kx
500mW
024-cycle
MT4C16261
40-Pin
MT4C16260/1
KAH marking
ci983
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDU CT OR INC blllSMT DDOTflQl T7T • PIRN b7E D PRELIMINARY MICRON ■ M T4LC 16270 256Kx 16 WIDE DRAM SEMICONDUCTOR. INC. WIDE DRAM 2 5 6 KX 1 6 DRAM 3.3V EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply*
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OCR Scan
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256Kx
500mW
512-cycle
MT4LC16270
CYCLE24
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PDF
|
|
Untitled
Abstract: No abstract text available
Text: ADVANCE M IC.nRwOi'« N I iih MT4LC16270 256KX 16 DRAM 2 5 6 K X 16 DRAM DRAM 3.3V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply* • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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T4LC16270
256KX
512-cycle
40-Pin
MT4LC16270
MT4LC1627Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MICRON SEMI CO NDU CTOR INC b7E D blllSMT GGDTfll? 3B7 iriRN PRELIMINARY MT4LC16256/7 S 256K X 16 WIDE DRAM MICRON m SEMiCONSUCTÛft IMC. WIDE DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x l6 pinouts, timing, functions
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OCR Scan
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MT4LC16256/7
512-cycle
16256/7S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JBL i»1M3 M IC R O N MT4C16260/1 256K x 16 WIDE DRAM I WIDE DRAM 256 K x 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process
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OCR Scan
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MT4C16260/1
500mW
024-cycle
MT4C16261
WT4C1C26G/1
C1993
MT4C1C260/1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: niCRON SEMICONDU CTOR INC b'iE D • hlllSMT □ □ G tìtì3tì 'iflT ■ URN M IC R O N I MT4C16260 256K X 16 DRAM SIM,CONDUCTOR ISC. DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages
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OCR Scan
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MT4C16260
024-cycle
C-1994.
|
PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M in P n M I - MT4LC16270 256K X 16 DRAM DRAM 256K x 16 DRAM 3.3V EDO PAGE MODE FEATURES • Single +3.3V ±0.3V power supply* • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Low power, 0.3mW standby; 165mW active, typical
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OCR Scan
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MT4LC16270
165mW
512-cycle
CYCLE24
|
PDF
|
Untitled
Abstract: No abstract text available
Text: I * * • " /G PRELIMINARY MICRON I 256K SEMICONDUCTOR MC WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • A ddress entry: ten row -addresses, eight colum naddresses
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OCR Scan
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MT4C16260/1
500mW
024-cycle
M74Cl626Q,
C1993,
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PDF
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MT4C16270DJ-7
Abstract: No abstract text available
Text: M IC R O N Mi MT4C16270 256Kx 16 DRAM TtoiMxasr. MC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical
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OCR Scan
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MT4C16270
256Kx
512-cycle
40-Pin
MT4C1027Q
MT4C16270DJ-7
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PDF
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MT4C16270DJ-7
Abstract: No abstract text available
Text: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I MT4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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MT4C16270
512-cycle
MT4C16270DJ-7
|
PDF
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Untitled
Abstract: No abstract text available
Text: m i t i » MT4C16256/7/8/9 L 256K X 1 6 WIDE DRAM MICRON • SEMICONDUCTOR. MC WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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MT4C16256/7/8/9
256KX16DRAM
MT4C16257
MT4C16258/9
512-cycle
500mW
T4C1S256/7/VU.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MICRON SEMICOND UCT OR INC bTE D • b l l l S M 11! DDÜTTbö 7ÖT ■ MRN M ir D H M 1 semiconductor inc. MT4C16256/7 256K X 16 DRAM 2 5 6 K X 16 DRAM DRAM FAST PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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MT4C16256/7
512-cycle
MT4C16257
MT4C162S6/7
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PDF
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