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    DRCF114E

    Abstract: drcf114
    Text: DRCF114E Tentative Total pages page DRCF114E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NB Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


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    PDF DRCF114E DRCF114E drcf114

    DRCF114W

    Abstract: No abstract text available
    Text: DRCF114W Tentative Total pages page DRCF114W Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N9 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


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    PDF DRCF114W DRCF114W

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DRCF114E Silicon NPN epitaxial planar type For digital circuits Complementary to DRAF114E DRC3114E in ML3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) DRCF114E DRAF114E DRC3114E DRCF114E0L

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DRCF114T Silicon NPN epitaxial planar type For digital circuits Complementary to DRAF114T DRC3114T in ML3 type package • Features  Package  High forward current transfer ratio hFE with excellent linearity


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    PDF 2002/95/EC) DRCF114T DRAF114T DRC3114T DRCF114T0L

    drcf114

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DRAF114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114E DRA3114E in ML3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) DRAF114E DRCF114E DRA3114E DRAF114E0L drcf114

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DRAF114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114T DRA3114T in ML3 type package • Features  Package  High forward current transfer ratio hFE with excellent linearity


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    PDF 2002/95/EC) DRAF114T DRCF114T DRA3114T DRAF114T0L

    DRCF114Y

    Abstract: No abstract text available
    Text: DRCF114Y Tentative Total pages page DRCF114Y Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


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    PDF DRCF114Y DRCF114Y

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DRCF114W Silicon NPN epitaxial planar type For digital circuits DRC3114W in ML3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, mount area reduction


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    PDF 2002/95/EC) DRCF114W DRC3114W DRCF114W0L 150ts.

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DRCF114Y Silicon NPN epitaxial planar type For digital circuits Complementary to DRAF114Y DRC3114Y in ML3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) DRCF114Y DRAF114Y DRC3114Y DRCF114Y0L

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DRAF114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114Y DRA3114Y in ML3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) DRAF114Y DRCF114Y DRA3114Y DRAF114Y0L

    DRCF114T

    Abstract: No abstract text available
    Text: DRCF114T Tentative Total pages page DRCF114T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : ND Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


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    PDF DRCF114T DRCF114T

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    MN864779

    Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
    Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.


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    PDF A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY