SMD resistor 334
Abstract: smd a7 SMD a7 47 Transistor SMD a7 Transistor RP03-0505SE RP03-0512SE RP03-0515SE RP03-1205SE RP03-1212SE RP03-1215SE
Text: Features Regulated Converters ● ● ● ● ● ● ● ● ● ● ● ● POWERLINE 2:1 Wide Input Voltage Range 3 Watts Regulated Output Power 1.6kVDC Isolation Also Available with Isolated Outputs, Output 1/Output 2 DS Isolation Low Profile, 10.2 mm Height
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DIP24
RP03-S
DIP24
RP03-053
RP03-0505SE*
RP03-0512SE*
Capacitive11
April-2005
SMD resistor 334
smd a7
SMD a7 47 Transistor
SMD a7 Transistor
RP03-0505SE
RP03-0512SE
RP03-0515SE
RP03-1205SE
RP03-1212SE
RP03-1215SE
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STP75NE75
Abstract: STP75NE75 MOSFET
Text: STP75NE75 N - CHANNEL 75V - 0.01Ω - 75A - TO-220 STripFET ” POWER MOSFET TARGET DATA TYPE STP75NE75 • ■ ■ ■ V DSS R DS on ID 75 V <0.013 Ω 75 A TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
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STP75NE75
O-220
STP75NE75
STP75NE75 MOSFET
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STU309DH
Abstract: stu309 stu309d U309DH 309d TO-252-4L
Text: S T U309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )
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U309DH
O-252-4L
STU309DH
O-252-4L
STU309DH
stu309
stu309d
U309DH
309d
TO-252-4L
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stu312d
Abstract: pf 312D U312D To-252-4 stu312
Text: S T U312D S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )
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U312D
O-252-4L
STU312D
O-252-4L
stu312d
pf 312D
U312D
To-252-4
stu312
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tf 3621
Abstract: 1575R 3621 c 3621
Text: S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 3A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -2A R DS (ON) ( m Ω )
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stu309d
Abstract: stu309 s t u 309d U309D
Text: S T U309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID -30V -14A R DS (ON) ( m Ω )
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U309D
O-252-4L
STU309D
O-252-4L
stu309d
stu309
s t u 309d
U309D
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stu409dh
Abstract: TO-252-4L stu409d
Text: S T U409DH S amHop Microelectronics C orp. May 29 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 18A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S
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U409DH
O-252-4L
O-252-4L
stu409dh
TO-252-4L
stu409d
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M8407
Abstract: STM8407
Text: S T M8407 S amHop Microelectronics C orp. J une.26,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A R DS (ON) ( m W )
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M8407
M8407
STM8407
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STU310DH
Abstract: TO-252-4L stu310
Text: S T U310DH S amHop Microelectronics C orp. May,28,2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 30V 19A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S
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U310DH
O-252-4L
STU310DH
O-252-4L
O-252-4
STU310DH
TO-252-4L
stu310
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STP75NE75
Abstract: STP75NE75FP
Text: STP75NE75 STP75NE75FP N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP75NE75 STP75NE75FP 75 V 75 V < 0.013 Ω < 0.013 Ω 75 A 40 A • ■ ■ ■ TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY
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STP75NE75
STP75NE75FP
O-220/TO-220FP
O-220
O-220FP
STP75NE75
STP75NE75FP
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A Ω ≤ 6.0 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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IXTF200N10T
200N10T
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STU407D
Abstract: U407D TU407D
Text: S T U407D S amHop Microelectronics C orp. J uly 27 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W )
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U407D
O-252-4L
O-252-4L
STU407D
U407D
TU407D
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SQ48S08060
Abstract: SQ48S S15018-1 SQ48T04120 SQ48S15012 TR-332 SQ48S15033 SQ48S10050 SQ48T05080-NBA0 SQ48T/S04120
Text: SQ48 Series Data Sheet The new SemiQ Family of DC/DC converters from di/dt provides a high efficiency single output in a size that is only 60% of industry-standard quarter bricks, while preserving the same pinout and functionality. In high temperature environments, for output voltages ranging from 3.3 V to 1.0 V, the thermal performance of SemiQ™
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866-WOW-didt
SQ48S08060
SQ48S
S15018-1
SQ48T04120
SQ48S15012
TR-332
SQ48S15033
SQ48S10050
SQ48T05080-NBA0
SQ48T/S04120
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stu407D
Abstract: STU407DH STU407 407DH STU-407DH 407D U407DH TO-252-4L
Text: S T U407DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m Ω )
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U407DH
O-252-4L
O-252-4L
stu407D
STU407DH
STU407
407DH
STU-407DH
407D
U407DH
TO-252-4L
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2SK2554
Abstract: Hitachi DSA00108
Text: 2SK2554 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)
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2SK2554
2SK2554
Hitachi DSA00108
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M8358S
Abstract: No abstract text available
Text: S T M8358S S amHop Microelectronics C orp. Oct.28, 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S
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M8358S
M8358S
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160N10T
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA160N10T7 RDS on = 100 V = 160 A Ω ≤ 7.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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IXTA160N10T7
160N10T
1-16-06-A
160N10T
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V
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IXTH160N10T
IXTQ160N10T
O-247
160N10T
1-16-06-A
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2SK3136
Abstract: DSA0037509 DSA003750 Hitachi DSA003750
Text: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696B Z 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB
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2SK3136
ADE-208-696B
220AB
2SK3136
DSA0037509
DSA003750
Hitachi DSA003750
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2N0807
Abstract: IPP80N08S2-07 IPB80N08S2-07 IPI80N08S2-07 2n08 SMD diode 132A PG-TO263-3-2 SP0002-19048 SP0002-19043
Text: IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 7.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB80N08S2-07
IPP80N08S2-07,
IPI80N08S2-07
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
SP0002-19048
2N0807
2N0807
IPP80N08S2-07
IPB80N08S2-07
IPI80N08S2-07
2n08
SMD diode 132A
PG-TO263-3-2
SP0002-19048
SP0002-19043
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2n08l07
Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
Text: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB80N08S2L-07
IPP80N08S2L-07
PG-TO263-3-2
PG-TO220-3-1
SP0002-19051
2N08L07
2n08l07
2N08L07 POWER
IPP80N08S2L-07
2n08l07 marking
IPB80N08S2L-07
2n08l
"2N08L07"
2n08
ANPS071E
PG-TO263-3-2
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PN08L07
Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
Text: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB100N08S2L-07
IPP100N08S2L-07
PG-TO263-3-2
PG-TO220-3-1
SP0002-19053
PN08L07
PN08L07
Diode smd 86
OPTIMOS
SMD MARKING CODE
PN08L07 S
Application Note ANPS071E
marking CODE R SMD DIODE
SMD MARKING CODE 102
TRANSISTOR SMD MARKING CODE ag
IPB100N08S2L-07
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Untitled
Abstract: No abstract text available
Text: Tem ic DG535/536 Semiconductors 16-Channel Wideband Video Multiplexers Features • • • • • • • Crosstalk: -100 dB @ 5 MHz 300 MHz Bandwidth Low Input and Output Capacitance Low Power: 75 fiW Low r DS on : 50 Q On-Board Address Latches Disable Output
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DG535/536
16-Channel
DG535/536
DG536
aMC14504B.
DG536.
P-32167--Rev.
15-Nov-93
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irf120
Abstract: VN64GA oni 350 2N6658 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
irf120
VN64GA
oni 350
2N6658
IRF122
IRF130
IRF132
IRF140
IRF142
IRF150
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