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    DS0808 Search Results

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    DS1304

    Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
    Text: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ


    Original     		PDF CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D DS1304 aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT

    RF6281PCBA-41X

    Abstract: MSL3-260
    Text: RF62813V Multi-Band UMTS Linear Power Amplifier Module RF6281 Preliminary 3V MULTI-BAND UMTS LINEAR POWER AMPLIFIER MODULE GND VCC1A 1 VREF m VCCBIAS RoHS Compliant & Pb-Free Product Package Style: Module, 16-Pin, 4 x 4 16 15 14 13 VCC2A Features „ „ „


    Original     		PDF RF62813V RF6281 16-Pin, 27dBm 16dBm -40dBc 203mm 330mm 025mm DS080811 RF6281PCBA-41X MSL3-260

    embedded dram timing

    Abstract: No abstract text available
    Text: ASIC DATA BOOK TC300 Series Embedded DRAM 2003 TC300 Series Embedded DRAM Published in December, 2003 Document ID: BDE0067A C Copyright 2003 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products.


    Original     		PDF TC300 BDE0067A DS08020801E DS08011001E DS0C020801E DS0C011001E DS08040801E DS08021001E DS10020801E embedded dram timing

    RF MMIC MARK CODE E4

    Abstract: icc 312 NBB-300 NBB-310 NBB-312 NBB-312-E NBB-312-T1 NBB-400 NLB-300 NLB-310
    Text: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic Features „ „ „ „ „ Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation


    Original     		PDF NBB-312 12GHz NBB-312 2002/95/EC DS080807 RF MMIC MARK CODE E4 icc 312 NBB-300 NBB-310 NBB-312-E NBB-312-T1 NBB-400 NLB-300 NLB-310

    SDSP0804

    Abstract: No abstract text available
    Text: Power Inductors Shielded-SMT Drum 8 x 4 mm SDSP0804 Series POWER INDUCTORS Used in high frequency DC/DC converters. Magnetically shielded for low EMI radiation. Low resistance and high energy storage. Robust base for reflow soldering. Inductance range from 1.0 µH to 100 µH.


    Original     		PDF SDSP0804 DS0807 DS0808 DS0809 DS0810 DS0811 DS0812 DSL812

    rf6285

    Abstract: ds0808
    Text: RF62853V Multi-Band UMTS Linear Power Amplifier Module RF6285 Preliminary 3V MULTI-BAND UMTS LINEAR POWER AMPLIFIER MODULE Features „ „ „ Applications „ „ „ 3V UMTS Multi-Band Handsets Multi-Mode UMTS Handsets Spread-Spectrum Systems GND GND GND GND


    Original     		PDF RF62853V RF6285 28-Pin, RF6285 203mm 330mm 025mm DS080811 ds0808

    900MHZ

    Abstract: JESD22-A114 LL1608-F1N8S RF3163 RF3163PCBA-41X Model 285 MATERIAL DECLARATION inductor
    Text: RF3163 RF31633V 900MHz Linear Power Amplifier Module 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Features „ 28dBm Linear Output Power „ -51dBc ACPR @ 885kHz „ 55% AMPS Efficiency „ „ „ „ 3V W-CDMA US-Cellular Handset 3V CDMA2000/1X-EV-DO USCellular Handset


    Original     		PDF RF3163 RF31633V 900MHz 16-Pin, 28dBm -51dBc 885kHz CDMA2000/1XRTT CDMA2000/1X-EV-DO JESD22-A114 LL1608-F1N8S RF3163 RF3163PCBA-41X Model 285 MATERIAL DECLARATION inductor

    J-STD-20

    Abstract: No abstract text available
    Text: RF3164 RF31643V 1900 MHz Linear Power Amplifier Module 3V 1900MHz LINEAR POWER AMPLIFIER MODULE „ Input Internally Matched@50Ω „ Output Internally Matched „ 28dBm Linear Output Power „ 40% Peak Linear Efficiency „ 28dB Linear Gain „ -50dBc ACPR @ 1.25MHz


    Original     		PDF RF31643V RF3164 1900MHz 16-Pin, 28dBm -50dBc 25MHz CDMA2000/1XRTT CDMA2000/1X-EV-DO RF3164 J-STD-20

    Untitled

    Abstract: No abstract text available
    Text: RF5198 RF51983 V 1950 MHz WCDMA Linear Power Amplifier Module 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE IM NC 16 15 14 13 RF IN 1 27.5dBm Linear Output Power 42% Peak Linear Efficiency „ -41dBc ACLR @ ±5MHz „ Integrated Power Detector „ HSDPA Capable


    Original     		PDF RF51983 RF5198 1950MHZ 16-Pin, -41dBc 2002/95/EC DS080807

    RF2103

    Abstract: RF2103L
    Text: RF2103L MEDIUM POWER LINEAR AMPLIFIER Package Style: SOIC-14 RF IN 1 Features       450MHz to 1000MHz Operation Up to 750mW CW Output Power 31dB Small Signal Gain Single 2.7V to 7.5V Supply 47% Efficiency Digitally Controlled Power Down Mode


    Original     		PDF RF2103L SOIC-14 450MHz 1000MHz 750mW RF2103L DS080805 RF2103

    800MHz CDMA Handset Circuit Diagram

    Abstract: RF5144PCBA-410 IPC-SM-782 RF5144
    Text: RF5144 RF5144DualBand CDMA 800MHz/190 0MHz TriMode Power Amplifier Module DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE „ „ „ VCC1 PCS VCC2 PCS VCC2 PCS VCC2 PCS VREG - PCS 1 Input/Output Internally Matched@50Ω 18 NC Bias PCS 17 NC RF IN - PCS 2


    Original     		PDF RF5144 RF5144DualBand 800MHz/190 800MHz/1900MHz 24-Pin, 28dBm -51dBc 885kHz 2002/95/EC DS080807 800MHz CDMA Handset Circuit Diagram RF5144PCBA-410 IPC-SM-782 RF5144

    SMPS 1000 SI 24V

    Abstract: C1A3B3
    Text: RF6280 Preliminary POWER MANAGEMENT IC „ „ „ „ „ „ „ „ „ „ 2.5MHz PWM Switching Frequency Automatic Bypass Mode Over Temperature Shutdown Current Limit Analog Bias Control Automatic and Buffer Three Individual Fast Transient 2.85V LDOs Controls up to 3 UMTS PAs


    Original     		PDF RF6280 15-Bump 650mA DS080811 SMPS 1000 SI 24V C1A3B3