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    DS1270 Search Results

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    DS1270 Price and Stock

    Maxim Integrated Products DS1270Y-70-

    IC NVSRAM 16MBIT PARALLEL 36EDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1270Y-70- Tube 153 1
    • 1 $256.45
    • 10 $256.45
    • 100 $255.06223
    • 1000 $255.06223
    • 10000 $255.06223
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    Maxim Integrated Products DS1270Y-70IND-

    IC NVSRAM 16MBIT PARALLEL 36EDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1270Y-70IND- Tube 18 1
    • 1 $325.6
    • 10 $325.6
    • 100 $325.6
    • 1000 $325.6
    • 10000 $325.6
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    Maxim Integrated Products DS1270Y-70

    IC NVSRAM 16MBIT PARALLEL 36EDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1270Y-70 Tube
    • 1 -
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    Maxim Integrated Products DS1270W-150

    IC NVSRAM 16MBIT PARALLEL 36EDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1270W-150 Tube
    • 1 -
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    Rochester Electronics DS1270W-150 94 1
    • 1 $161.12
    • 10 $161.12
    • 100 $151.45
    • 1000 $136.95
    • 10000 $136.95
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    Rochester Electronics LLC DS1270W-150

    IC NVSRAM 16MBIT PARALLEL 36EDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1270W-150 Tube 2
    • 1 -
    • 10 $167.56
    • 100 $167.56
    • 1000 $167.56
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    DS1270 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS1270AB Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-100 Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-100 Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270AB-100 Maxim Integrated Products 100 ns, Vcc=5V±5%, 16 M nonvolatile SRAM Original PDF
    DS1270AB-100# Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270AB-100IND Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-100-IND Maxim Integrated Products 100 ns, Vcc=5V±5%, 16 M nonvolatile SRAM Original PDF
    DS1270AB-70 Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-70 Maxim Integrated Products 70 ns, Vcc=5V±5%, 16 M nonvolatile SRAM Original PDF
    DS1270AB-70# Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270AB-70IND Dallas Semiconductor 16M Nonvolatile SRAM Original PDF
    DS1270AB-70-IND Maxim Integrated Products 70 ns, Vcc=5V±5%, 16 M nonvolatile SRAM Original PDF
    DS1270AB-70IND# Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270W Maxim Integrated Products 3.3V 16Mb Nonvolatile SRAM Original PDF
    DS1270W-100 Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270W-100# Maxim Integrated Products 3.3V 16Mb Nonvolatile SRAM Original PDF
    DS1270W-100IND Maxim Integrated Products 16M Nonvolatile SRAM Original PDF
    DS1270W-100-IND Maxim Integrated Products 3.3 V 16 Mb Nonvolatile SRAM Original PDF
    DS1270W-100IND# Maxim Integrated Products 3.3V 16Mb Nonvolatile SRAM Original PDF
    DS1270W-150 Maxim Integrated Products 16M Nonvolatile SRAM Original PDF

    DS1270 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16MB SRAM

    Abstract: 1024k DS1270W DS1249W DS1265W 36-DIP
    Text: INDUSTRY’S HIGHEST DENSITY 3.3V NONVOLATILE SRAMs Densities up to 16Mb Protect Data for 3.3V Systems The DS1249W, DS1265W, and DS1270W are low-voltage, high-density NV SRAMs designed to preserve critical system data during power loss. Each of these dual in-line encapsulated modules operates on a single 3.3V power supply and employs


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    PDF DS1249W, DS1265W, DS1270W 100ns 150ns DS1249W DS1265W 1024k 2048k 16MB SRAM 36-DIP

    DS1270Y-70IND

    Abstract: DS1270 DS1270AB DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-70
    Text: 19-5615; Rev 11/10 DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


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    PDF DS1270Y/AB DS1270Y) DS1270AB) MDT36 DS1270Y-70IND DS1270 DS1270AB DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-70

    DS1270W

    Abstract: No abstract text available
    Text: 19-5614; Rev 11/10 DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


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    PDF DS1270W 100ns MDT36 DS1270W

    DS1270W

    Abstract: No abstract text available
    Text: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


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    PDF DS1270W 100ns DS1270W 150ns 36-PIN, 740MIL 36-PIN

    DS1270

    Abstract: DS1270W DS1270W-100 DS1270W-150
    Text: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


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    PDF DS1270W 100ns DS1270W 150ns 36-PIN, 740MIL 36-PIN DS1270 DS1270W-100 DS1270W-150

    DS1270W

    Abstract: No abstract text available
    Text: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


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    PDF DS1270W 100ns 36-Pin 740mil 100pF 150ns DS1270W

    DS1270

    Abstract: DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70
    Text: DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


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    PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin 600-mil DS1270Y/AB 740-MIL 36-PIN DS1270 DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB 16M Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


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    PDF DS1270Y/AB DS1270Y) DS1270AB) DS1270 36-pin 600-mil DS1270Y/AB 740-MIL

    Untitled

    Abstract: No abstract text available
    Text: 19-5615; Rev 11/10 DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


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    PDF DS1270Y/AB DS1270Y) DS1270AB) MDT36

    DS1270

    Abstract: DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70
    Text: DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


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    PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin 600-mil DS1270Y/AB 740-MIL 36-PIN DS1270 DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70

    DS1270

    Abstract: DS1270AB DS1270AB-100 DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-70
    Text: DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


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    PDF DS1270Y/AB DS1270Y) DS1270AB) 100ns DS9034PC DS9034PCI DS1270 DS1270AB DS1270AB-100 DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-70

    DS1270

    Abstract: DS1270AB DS1270Y A6829 DS1270Y-AB
    Text: DS1270Y/AB PRELIMINARY DS1270Y/AB 16M Nonvolatile SRAM FEATURES PIN ASSIGNMENT •5 years minimum data retention in the absence of external power NC 1 36 VCC • Data is automatically protected during power loss A20 2 35 A19 • Unlimited write cycles A18


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    PDF DS1270Y/AB DS1270Y/AB DS1270 DS1270AB DS1270Y A6829 DS1270Y-AB

    DS1270W

    Abstract: DS1270 DS1270W-100 DS1270W-100IND E99151 DS12
    Text: 19-5614; Rev 11/10 DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


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    PDF DS1270W 100ns MDT36 DS1270W DS1270 DS1270W-100 DS1270W-100IND E99151 DS12

    DS1270W

    Abstract: DS1270 DS1270W-100 DS1270W-100IND DS1270W-150 DS9034PC DS9034PCI ds1270w-100#
    Text: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


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    PDF DS1270W 100ns 150ns DS9034PC DS9034PCI DS1270W DS1270 DS1270W-100 DS1270W-100IND DS1270W-150 DS9034PCI ds1270w-100#

    ST L1117

    Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
    Text: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS


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    PDF A011905 ST L1117 ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905

    DS1270W

    Abstract: DS2070W-100 DS2070W
    Text: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2070W 256-ball DS2070W DS1270W DS2070W-100

    F5 sot223

    Abstract: DS18S20Z DS1270Y-70IND TSOC 6 socket ds1480 DS1321 DS1667S-010 DS2404S-001 DS2404S001 dallas ds1213c
    Text: DS1233A 3.3V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to


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    PDF DS1233A 350ms OT-223 DS9092K DS9092R DS9093A DS9092RG F5 sot223 DS18S20Z DS1270Y-70IND TSOC 6 socket ds1480 DS1321 DS1667S-010 DS2404S-001 DS2404S001 dallas ds1213c

    DS1425L-F5

    Abstract: F5 sot223 TSOC 6 socket DS-1100 DS1267SN-100 DS1314DS DS275 8-Pin SOIC 150-mil DS1667S-010 DS1640 DS1238S5
    Text: DS1233 5V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to


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    PDF DS1233 350ms OT-223 DS9092K DS9092R DS9093A DS9092RG DS1425L-F5 F5 sot223 TSOC 6 socket DS-1100 DS1267SN-100 DS1314DS DS275 8-Pin SOIC 150-mil DS1667S-010 DS1640 DS1238S5

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB DALLAS DS1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inimum data retention in the absence of external power NC É A20 • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles


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    PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin DS1270Y/AB 36-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years m inimum data retention in the absence of external power NC É A20 • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles


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    PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin DS1270Y/AB 36-PIN

    cycles

    Abstract: No abstract text available
    Text: DS1270Y/AB DALLAS SEMICONDUCTOR FEATURES DS1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years minimum data retention in the absence of external power NC I 1 1 A2Û 11 • Data is automatically protected during power loss 2 A 18 11 3 • Unlimited write cycles


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    PDF DS1270Y/AB DS1270Y) DS1270AB) DS1270Y/AB DS1270 216-bit. cycles

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR DS1270Y/AB 16M Nonvolatile SRAM FEATURES PIN ASSIG NM ENT • 5 years minimum data retention in the absence of external power Vcc A19 • Data is automatically protected during power loss NC • Unlimited write cycles


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    PDF DS1270Y/AB DS1270Y) DS1270AB) DQ7100: DS1270Y/AB 36-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years minimum data retention in the absence of external power NC I 1 A20 1 • Datais automatically protected during power loss A18 I • Unlimited write cycles


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    PDF DS1270Y/AB DS1270Y) DS1270Y/AB 36-pin 35-PIN

    DS1270

    Abstract: DS1270AB DS1270AB-70 DS1270Y DS1270Y-70
    Text: DS1270Y/AB DALLAS DS1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inim um data retention in the absence of external power NC 1 1 36 | A20 1 2 35 | A18 1 3 34 | NC A16 1 4 33 | A15 A14 1 5 32 | A17 A12 1 6 31 1


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    PDF DS1270Y/AB DS1270Y) DS1270AB) 36-pin DS1270Y/AB 36-PIN DS1270 DS1270AB DS1270AB-70 DS1270Y DS1270Y-70