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    DS32096

    Abstract: No abstract text available
    Text: DMS3015SSS N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS ON - minimizes conduction losses


    Original     		PDF DMS3015SSS AEC-Q101 DS32096

    DMS3015SSS

    Abstract: DMS3015SSS-13 aa3b DS32096
    Text: DMS3015SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS ON - minimizes conduction losses


    Original     		PDF DMS3015SSS AEC-Q101 DS32096 DMS3015SSS DMS3015SSS-13 aa3b

    S3015SS

    Abstract: DMS3015SSS DS32096 DMS3015SSS-13
    Text: DMS3015SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency


    Original     		PDF DMS3015SSS AEC-Q101 J-STD-02 DS32096 S3015SS DMS3015SSS DMS3015SSS-13