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    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • N EW PRODU CT 60V Description and Applications


    Original     		PDF DMN65D8LFB 400mA 330mA DS35449

    DMN65D

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • NEW PRODUCT 60V Description and Applications These N-Channel enhancement mode field effect transistors are


    Original     		PDF DMN65D8LFB 330mA 400mA AEC-Q101 DS35449 DMN65D