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    Untitled

    Abstract: No abstract text available
    Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A -12V


    Original
    DMP1022UFDE AEC-Q101 DS35477 PDF

    DMP1022

    Abstract: Diode markings 79a DMP1022UFDE
    Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V


    Original
    DMP1022UFDE AEC-Q101 U-DFN2020-6 J-STD-020and DS35477 DMP1022 Diode markings 79a DMP1022UFDE PDF

    diode 79A

    Abstract: No abstract text available
    Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V


    Original
    DMP1022UFDE AEC-Q101 U-DFN2020-6 J-STD-020 DS35477 diode 79A PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A -12V


    Original
    DMP1022UFDE AEC-Q101 U-DFN2020-6 DS35477 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A V(BR)DSS • • • • •


    Original
    DMP1022UFDE AEC-Q101 U-DFN2020-6 J-STD-020 DS35477 PDF