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    G4407SS

    Abstract: No abstract text available
    Text: DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 11mΩ @ VGS = -20V -9.9A 17mΩ @ VGS = -6V -8.2A V(BR)DSS NEW PRODUCT -30V Features and Benefits Description This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF DMG4407SSS AEC-Q101 DS35540 G4407SS

    G4407SS

    Abstract: No abstract text available
    Text: DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = -20V -9.9A 17mΩ @ VGS = -6V -8.2A • • • • • • -30V Mechanical Data Description and Applications


    Original     		PDF DMG4407SSS AEC-Q101 DS35540 G4407SS

    Untitled

    Abstract: No abstract text available
    Text: DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary N EW PRODU CT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = -20V -9.9A 17mΩ @ VGS = -6V -8.2A • • • • • • -30V Mechanical Data Description and Applications


    Original     		PDF DMG4407SSS AEC-Q101 DS35540