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    DMN2075UDW-7

    Abstract: No abstract text available
    Text: DMN2075UDW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on max TA = 25°C 48mΩ @ VGS = 4.5V 2.8A 59mΩ @ VGS = 2.5V 2.6A 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN2075UDW AEC-Q101 OT363 DS35542 DMN2075UDW-7

    DMN2075

    Abstract: DMN2075UDW-7
    Text: DMN2075UDW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on max V(BR)DSS TA = 25°C 48mΩ @ VGS = 4.5V 2.8A 59mΩ @ VGS = 2.5V 2.6A 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN2075UDW AEC-Q101 OT363 DS35542 DMN2075 DMN2075UDW-7