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    Abstract: No abstract text available
    Text: DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management


    Original     		DMP1080UCB4 AEC-Q101 U-WLB1010-4 DS35827 PDF

    WL-CSP1010H6-4

    Abstract: No abstract text available
    Text: DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 80mΩ @ VGS = -4.5V -3.3A 93mΩ @ VGS = -2.5V -3.0A V(BR)DSS • • • • • • • -12V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMP1080UCB4 AEC-Q101 DS35827 WL-CSP1010H6-4 PDF