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Catalog Datasheet	MFG & Type	PDF	Document Tags
NF 838 G Abstract: No abstract text available Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges	Original	PDF	CHA2063a 7-13GHz CHA2063a 7-13GHz 8-13GHz 18dBm DSCHA20630096 -05-Apr-00 NF 838 G
Untitled Abstract: No abstract text available Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges	Original	PDF	CHA2063a 7-13GHz CHA2063a 7-13GHz 8-13GHz 18dBm DSCHA20630096 -05-Apr-00
NF 838 G Abstract: CHA2063A Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges	Original	PDF	CHA2063a 7-13GHz CHA2063a 7-13GHz 8-13GHz 18dBm DSCHA20630096 -05-Apr-00 NF 838 G
8-12GHz Abstract: SS 1603 NF 838 G Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and	Original	PDF	CHA2063a 7-13GHz CHA2063a 7-13GHz 8-13GHz 18dBm DSCHA20630096 -05-Apr-00 8-12GHz SS 1603 NF 838 G