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    E850R599 Search Results

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    63000-000

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


    OCR Scan     		PDF NE850R5 E850R599 CODE-99 63000-000

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET E850R599A FEATURES_ OUTLINE DIMENSIONS • HIGH O U T P U T POW ER: 0.5 W Units in mm PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB • HIG H EFFICIENC Y (PAE): 38% • SU PER IO R IN TER M O D U LA TIO N DISTORTIO N


    OCR Scan     		PDF NE850R599A E850R599A NE8500100 NE850R599A NEC Microwave Semiconductors