Untitled
Abstract: No abstract text available
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse
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RFHA1020
DS120508
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120613
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SEMICONDUCTOR J598
Abstract: No abstract text available
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse
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RFHA1023
RFHA1023
DS120508
SEMICONDUCTOR J598
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RFHA1023
Abstract: SEMICONDUCTOR J598
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023
RFHA1023
DS110630
SEMICONDUCTOR J598
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Untitled
Abstract: No abstract text available
Text: RFHA1020 RFHA1020 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high
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RFHA1020
RFHA1020
DS131021
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120928
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rfha1020
Abstract: No abstract text available
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation
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RFHA1020
RFHA1020
DS110719
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samsung CL21
Abstract: CL21 105 j ECJ2VB1H104K 0805B104K500NT CL21B104KB C0805X7R500-104KNE CL21B104KBFNNNC vishay 01005 C0805X7R500 CL21 B 474
Text: Cross Reference Guide Chip Capacitors Venkel P/N C0805 X7R 500 Series/Size Temperature See Chart Characteristic Rated Voltage Capacitance 1st two digits pico - Farads are significant 1st two digits followed by are significant, number of zeroes. followed by
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C0805
C0805X7R500-104KNE
VJ0805Y104KXAAT
samsung CL21
CL21 105 j
ECJ2VB1H104K
0805B104K500NT
CL21B104KB
CL21B104KBFNNNC
vishay 01005
C0805X7R500
CL21 B 474
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c11cf
Abstract: No abstract text available
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse
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RFHA1023
RFHA10k
DS120508
c11cf
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high
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RFHA1025
RFHA1025
DS130910
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Untitled
Abstract: No abstract text available
Text: RFHA1023 RFHA1023 225W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high
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RFHA1023
RFHA1023
DS131021
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ECJ2VB1H104K
Abstract: air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse
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RFHA1020
RFHA1020
DS120508
ECJ2VB1H104K
air surveillance system diagram using radar
Gan hemt transistor RFMD
28F0181-1SR-10
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Untitled
Abstract: No abstract text available
Text: RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features • Wideband Operation 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle
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RFHA1025
96GHz
215GHz
RFHA1025
DS130515
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TRANSISTOR D2102
Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
Text: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and
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TX-28/25/21MD4
TZS6EZ002
TZS7EZ006
TZS7EZ005
TRANSISTOR D2102
L3003 TRANSISTOR
ETP35KAN619U
L3005 TRANSISTOR
1SR124-4AT82
transistor D454
D362 TRANSISTOR
l3007
ma29ta5
TELEVISION EHT TRANSFORMERS
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SEMICONDUCTOR J598
Abstract: rfha
Text: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023A
15dBm
RFHA1023A
DS110622
SEMICONDUCTOR J598
rfha
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