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    J200M

    Abstract: No abstract text available
    Text: ^EDI ED I784M SV ELECIRONCDE9GIS&NC 4Megx8NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


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    PDF I784M EDI784MSV EDI784MSV50BB EDI784MSV50FB EDf784MSV50BB EDI784MSV50BC EDI784MSV50BI 050TYP. EDI784MSV J200M